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Chin. Phys. B, 2013, Vol. 22(4): 045204    DOI: 10.1088/1674-1056/22/4/045204

The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH4/NH3/N2 plasmas: Two-dimensional simulations

Liu Xiang-Meia, Song Yuan-Hongb, Jiang Weia, Yi Lina
a School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China;
b School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China
Abstract  A two-dimensional (2D) fluid model is presented to study the behavior of silicon plasma mixed with SiH4, N2, and NH3 in radio-frequency capacitively coupled plasma (CCP) reactor. The plasma-wall interaction (including the deposition) is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2/NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing significantly the electron density.
Keywords:  capacitively coupled plasma      process conditions effects      SiH4/NH3/N2 discharges     
Received:  16 July 2012      Published:  01 March 2013
PACS:  52.65.-y (Plasma simulation)  
  52.25.-b (Plasma properties)  
  52.80.Pi (High-frequency and RF discharges)  
Fund: Project supported by China Postdoctoral Science Foundation (Grant No. 2012M511603), the National Natural Science Foundation of China (Grant Nos. 11105057 and 10775025), the Natural Science Foundation of Hubei Province of China (Grant No. 2007ABA035), and the Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0073).
Corresponding Authors:  Yi Lin     E-mail:

Cite this article: 

Liu Xiang-Mei, Song Yuan-Hong, Jiang Wei, Yi Lin The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH4/NH3/N2 plasmas: Two-dimensional simulations 2013 Chin. Phys. B 22 045204

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