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Chin. Phys. B, 2013, Vol. 22(1): 017301    DOI: 10.1088/1674-1056/22/1/017301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge

Hu Bo, Huang Shi-Hua, Wu Feng-Min
Physics Department, Zhejiang Normal University, Jinhua 321004, China
Abstract  A model based on analysis of self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor (MOS) structure. In this model, the influences of interface trap charge (ITC) at the Si-SiO2 interface and fixed oxide charge (FOC) in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si-SiO2 interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than 1012 cm-2, which results from the great change of bound electrons near the Si-SiO2 interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for tunneling current in the inversion layer.
Keywords:  tunneling current      ultrathin oxide      interface trap charge      fixed oxide charge  
Received:  09 June 2012      Revised:  09 July 2012      Accepted manuscript online: 
PACS:  73.40.Jn (Metal-to-metal contacts)  
  73.50.-h (Electronic transport phenomena in thin films)  
  61.72.-y (Defects and impurities in crystals; microstructure)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61076055), the Program for Innovative Research Team of Zhejiang Normal University of China (Grant No. 2007XCXTD-5), and the Open Program of Surface Physics Laboratory of Fudan University, China (Grant No. FDS KL2011_04).
Corresponding Authors:  Huang Shi-Hua     E-mail:  huangshihua@zjnu.cn

Cite this article: 

Hu Bo, Huang Shi-Hua, Wu Feng-Min Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge 2013 Chin. Phys. B 22 017301

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