A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

doi:10.1088/1674-1056/21/4/047303

Abstract A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson-Boltzmann equation, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.

Keywords: charge-based model silicon-on-insulator metal-oxide semiconductor field-effect transistors compact model double gate

Received: 26 July 2011
Revised: 26 October 2011
Accepted manuscript online:

PACS:	73.40.Ty	(Semiconductor-insulator-semiconductor structures)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	61.44.Br	(Quasicrystals)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60876027), the State Key Program of the National Natural Science Foundation of China (Grant No. 61036004), the Shenzhen Science and Technology Foundation, China (Grant No. CXB201005250031A), the Fundamental Research Project of Shenzhen Science and Technology Foundation, China (Grant No. JC201005280670A), and the International Collaboration Project of Shenzhen Science & Technology Foundation, China (Grant No. ZYA2010006030006A).

Corresponding Authors: He Jin,frankhe@pku.edu.cn
E-mail: frankhe@pku.edu.cn

Cite this article:

Zhang Jian(张健), He Jin(何进), Zhou Xing-Ye(周幸叶), Zhang Li-Ning(张立宁), Ma Yu-Tao(马玉涛), Chen Qin(陈沁), Zhang Xu-Kai(张勖凯), Yang Zhang(杨张), Wang Rui-Fei(王睿斐), HanYu(韩雨), and Chan Mansun(陈文新) A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel 2012 Chin. Phys. B 21 047303

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A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

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