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Chin. Phys. B, 2010, Vol. 19(2): 027202    DOI: 10.1088/1674-1056/19/2/027202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

Long Xue, Li Xaing, Lin Peng-Ting, Cheng Xing-Wang, Liu Ying, Cao Chuan-Bao
School for Materials Science & Engineering, Beijing Institute of Technology Beijing, Beijing 100081, China
Abstract  Sol--gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed is that increasing Mg concentration in the studied samples induces the full width at half maximum (FWHM) of their near-band-edge (NBE) emission decrease and the defect related emission of the corresponding sample suppresses drastically. The possible mechanism of the observed result is discussed.
Keywords:  doping      ZnO      photoluminescence  
Received:  03 August 2009      Revised:  29 September 2009      Published:  15 February 2010
PACS:  75.80.+q (Magnetomechanical effects, magnetostriction)  
  77.65.Fs (Electromechanical resonance; quartz resonators)  
  72.80.Tm (Composite materials)  
  07.07.Df (Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)  

Cite this article: 

Long Xue, Li Xaing, Lin Peng-Ting, Cheng Xing-Wang, Liu Ying, Cao Chuan-Bao Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films 2010 Chin. Phys. B 19 027202

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