Intra-acceptor hole relaxation in Be $\delta$-doped GaAs/AlAs multiple quantum wells
Li Su-Mei(李素梅)a)b), Zheng Wei-Min(郑卫民)a)†, Song Ying-Xin(宋迎新)a), Liu Jing(刘静)a), and Chu Ning-Ning(初宁宁)a)
a School of Space Science and Physics, Shandong University at Weihai, Weihai 264209, China; b School of Information Engineering, Shandong University at Weihai, Weihai 264209, China
Abstract This paper studies the dynamics of intra-acceptor hole relaxation in Be $\delta$-doped GaAs/AlAs multiple quantum wells (MQW) with doping at the centre by time-resolved pump-probe spectroscopy using a picosecond free electron laser for infrared experiments. Low temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of the Be acceptor from the ground state to the first three odd-parity excited states respectively. The pump-probe experiments are performed at different temperatures and different pump pulse wavelengths. The hole relaxation time from 2p excited state to 1s ground state in MQW is found to be much shorter than that in bulk GaAs, and shown to be independent of temperature but strongly dependent on wavelength. The zone-folded acoustic phonon emission and slower decay of the wavefunctions of impurity states are suggested to account for the reduction of the 2p excited state lifetime in MQW. The wavelength dependence of the 2p lifetime is attributed to the diffusion of the Be atom δ -layer in quantum wells.
Received: 13 November 2008
Revised: 19 February 2009
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 60776044) and the
Natural Science Foundation of Shandong Province, China (Grant No
2006ZRA10001).
Cite this article:
Li Su-Mei(李素梅), Zheng Wei-Min(郑卫民), Song Ying-Xin(宋迎新), Liu Jing(刘静), and Chu Ning-Ning(初宁宁) Intra-acceptor hole relaxation in Be $\delta$-doped GaAs/AlAs multiple quantum wells 2009 Chin. Phys. B 18 3975
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