Abstract High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 μm Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 μm, respectively. The dark current density is 0.37 mA/cm2 and 29.4 mA/cm2 at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30 μm, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550~nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.
Received: 19 November 2008
Revised: 27 November 2008
Accepted manuscript online:
PACS:
85.60.Gz
(Photodetectors (including infrared and CCD detectors))
Fund: Project supported by the National
High-Technology Research and Development Program of China (Grant No
2006AA03Z415), the Major State Basic Program of China (Grant No
2007CB613404), and the National Natural Science Foundation of China
(Grant No 60676005).
Cite this article:
Xue Hai-Yun(薛海韵), Xue Chun-Lai(薛春来), Cheng Bu-Wen(成步文), Yu Yu-De(俞育德), and Wang Qi-Ming(王启明) Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm 2009 Chin. Phys. B 18 2542
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