Relations between compositional modulation and atomic ordering degree in thin films of ternary III—V semiconductor alloys
Zhang Li-Ping (张丽平)a, ZhengZhen (郑震)b, Liang Jia-Chang (梁家昌)a, Le Xiao-Yun(乐小云)c, Zou Chao (邹超)d, Liu Huan-Li (刘焕礼)a, Liu Ye (刘冶)a
aCollege of Science, Civil Aviation University of China, Tianjin 300300, China; bShenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518067, China; c Department of Physics, Beijing University of Aeronautics & Astronautics, Beijing 100083, China; dChina Electronic Standardization Institute, Beijing 100007, China
Abstract This paper derives the expressions for the ordering degree and the modulation factor of A and B atoms in AxB1-xC epilayers of ternary III--V semiconductor alloys. Using these expressions, it identifies quantitatively the alternating atom-enhanced planes, compositional modulations, atomic ordering degree on the group-III sublattices and the fine structure of NMR spectra.
Received: 15 April 2008
Revised: 13 May 2008
Accepted manuscript online:
Fund: Project
supported by the National Natural Science Foundation of China (Grant
No 60572177) and by CAUC Foundation (Grant No 05yk27s).
Cite this article:
Zhang Li-Ping (张丽平), Zheng Zhen (郑震), Liang Jia-Chang (梁家昌), Le Xiao-Yun(乐小云), Zou Chao (邹超), Liu Huan-Li (刘焕礼), Liu Ye (刘冶) Relations between compositional modulation and atomic ordering degree in thin films of ternary III—V semiconductor alloys 2008 Chin. Phys. B 17 4619
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