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Chin. Phys. B, 2000, Vol. 9(1): 31-36    DOI: 10.1088/1009-1963/9/1/007
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ANALYSES FOR LASING THRESHOLD AT 2 AND 1.5μm WAVELENGTHS IN Tm:YVO4 CRYSTAL

Huang Li-leia, Hong Zhib
a Optoelectronic Division, China Institute of Metrology, Hangzhou 310034, China; b Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China
Abstract  From transition-rate-equations and transmission-equations the formulas of threshold power are deduced for an end-pumped laser, in which the probability of cross-relaxation cannot be ignored and the nonradiative transition-probability of the excited state is the same order as the radiative transition-probability of upper level of the lasing transition. The lasing performance of Tm:YVO4 at $\lambda$=1.9 and 1.5μm is discussed by dint of these equations of threshold power.
Received:  19 March 1999      Revised:  10 May 1999      Accepted manuscript online: 
PACS:  32.70.Cs (Oscillator strengths, lifetimes, transition moments)  
  42.55.Rz (Doped-insulator lasers and other solid state lasers)  
  42.60.By (Design of specific laser systems)  
Fund: Project supported by the Foundation of State Key Laboratory of Zhejiang University of China (Grant No. LM01-9813).

Cite this article: 

Huang Li-lei, Hong Zhi ANALYSES FOR LASING THRESHOLD AT 2 AND 1.5μm WAVELENGTHS IN Tm:YVO4 CRYSTAL 2000 Chin. Phys. B 9 31

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