Si1Sb2Te3 phase change material for chalcogenide random access memory
Zhang Ting(张挺)a)b)†, Song Zhi-Tang(宋志棠)a), Liu Bo(刘波)a), Liu Wei-Li(刘卫丽)a), Feng Song-Lin(封松林)a), and Chen Bomy(陈邦明)c)
a Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; b Graduate School of the Chinese Academic of Sciences, Beijing 100049, China; c Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086 U.S.A.
AbstractThis paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current--voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at $\sim$ 180℃ and changes to hexagonal structure at $\sim$ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3film was studied by four-point probe method. Data retention of the films was characterized as well.
Received: 12 May 2006
Revised: 08 January 2007
Accepted manuscript online:
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
Fund: Project
supported by the Special Funds for Major State Basic Research Project of
China (Grant No~2006CB302700), the National High Technology Development
Program of China (Grant No~2006AA03Z360), the Chinese Academy of Sciences
(Grant No~Y2005027),
Scien
Cite this article:
Zhang Ting(张挺), Song Zhi-Tang(宋志棠), Liu Bo(刘波), Liu Wei-Li(刘卫丽), Feng Song-Lin(封松林), and Chen Bomy(陈邦明) Si1Sb2Te3 phase change material for chalcogenide random access memory 2007 Chinese Physics 16 2475
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