Abstract This paper investigates gate current through ultra-thin gate oxide of nano-scale metal oxide semiconductor field effect transistors (MOSFETs), using two-dimensional (2D) full-band self-consistent ensemble Monte Carlo method based on solving quantum Boltzmann equation. Direct tunnelling, Fowler--Nordheim tunnelling and thermionic emission currents have been taken into account for the calculation of total gate current. The 2D effect on the gate current is investigated by including the details of the energy distribution for electron tunnelling through the barrier. In order to investigate the properties of nano scale MOSFETs, it is necessary to simulate gate tunnelling current in 2D including non-equilibrium transport.
Received: 07 June 2006
Revised: 28 August 2006
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Cite this article:
Xia Zhi-Liang(夏志良), Du Gang(杜刚), Liu Xiao-Yan(刘晓彦), Kang Jin-Feng(康晋锋), and Han Ru-Qi(韩汝琦) Investigation of gate current in nano-scale MOSFETs by Monte Carlo solution of quantum Boltzmann equation 2007 Chinese Physics 16 537
Multiple scattering and modeling of laser in fog Ji-Yu Xue(薛积禹), Yun-Hua Cao(曹运华), Zhen-Sen Wu(吴振森), Jie Chen(陈杰), Yan-Hui Li(李艳辉), Geng Zhang(张耿), Kai Yang(杨凯), and Ruo-Ting Gao(高若婷). Chin. Phys. B, 2021, 30(6): 064206.
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