Vortex domain structures and dc current dependence of magneto-resistances in magnetic tunnel junctions
Wei Hong-Xiang (魏红祥)ab, Lu Qing-Feng (路庆凤)a, Zhao Su-Fen (赵素芬)b, Zhang Xie-Qun (张谢群)b, Feng Jia-Feng (丰家峰)b, Han Xiu-Feng (韩秀峰)b
a Department of Physics and Communication, Henan Normal University, Xinxiang 453002, China; b State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract Microfabrication and the magneto-transport characteristics of the magnetic tunnel junctions (MTJs) with a spin-valve-type structure of Ta (5nm)/Ni$_{79}$Fe$_{21}$ (25nm)/Ir$_{22}$Mn$_{78}$ (12nm)/Co$_{75}$Fe$_{25}$ (4nm)/Al(0.8nm) oxide/Co$_{75}$Fe$_{25}$ (4nm)/Ni$_{79}$Fe$_{21}$ (20nm)/Ta(5nm) were investigated in this paper. A series of experimental data measured with a MTJ was used to verify a magnon-assisted tunnelling model and theory. Furthermore, a micromagnetics simulation shows that the butterfly-like vortex domain structures can be formed under a current-induced Oersted field, which decreases the net magnetization values of the ferromagnetic electrodes under a large dc current (i.e., in high voltage regimes). It is one of the main reasons for the tunnel magnetoresistance ratios to decrease significantly at high voltage biasing.
Received: 13 April 2004
Revised: 18 June 2004
Accepted manuscript online:
(Quantized spin models, including quantum spin frustration)
Cite this article:
Wei Hong-Xiang (魏红祥), Lu Qing-Feng (路庆凤), Zhao Su-Fen (赵素芬), Zhang Xie-Qun (张谢群), Feng Jia-Feng (丰家峰), Han Xiu-Feng (韩秀峰) Vortex domain structures and dc current dependence of magneto-resistances in magnetic tunnel junctions 2004 Chinese Physics 13 1553
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