Abstract The preparation of a metallic diffuse fringe film system by dc-magnetron sputtering is described. The diffuse fringe structure of the film system is clearly observed in the SEM photograph when, during the film deposition process, the distance between the slit shutter and the substrate is large enough. Our experimental results show that the anomalous nonlinear I-V behavior of the system is mainly caused by the diffuse fringe effect. The temperature dependence of the sheet resistance is similar to that of the metallic flat film system in the temperature interval 77-300 K.
Received: 21 August 1995
Accepted manuscript online:
(Scanning electron microscopy (SEM) (including EBIC))
Fund: Project supported by the National Natural Science Foundation of China.
Cite this article:
FENG CHUN-MU (冯春木), GE HONG-LIANG (葛洪良), YU GAO-XIANG (叶高翔), ZHANG QI-RUI (张其瑞) ELECTRICAL TRANSPORT BEHAVIOR OF AN Au DIFFUSE FRINGE FILM PERCOLATION SYSTEM 1996 Acta Physica Sinica (Overseas Edition) 5 538
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