Please wait a minute...
Acta Physica Sinica (Overseas Edition), 1995, Vol. 4(11): 806-809    DOI: 10.1088/1004-423X/4/11/002
GENERAL Prev   Next  

NORMAL-INCIDENCE QUANTUM WELL INFRARED PHOTODETECTOR WITHOUT GRATING COUPLER

WANG WEN-XIN (王文新), HU QIANG (胡强), HUANG QI (黄绮), ZHOU JUN-MING (周均铭), CUI DA-FU (崔大复), CHEN ZHENG-HAO (陈正豪)
Institute of Physics, Academia Sinica, Beijing 100080 , China
Abstract  The n-type GaAs/AlxGa1-xAs multiple quantum well infrared photodetectors have been demonstrated without any grating couplers. We have achieved a responsivity Rv of 1.7×105V/W and a detectivity D$\lambda$* of 4.0×1010 cm (Hz)1/2/W for a wavelength of 8.4 μm at a temperature T = 77 K in normal incidence.
Received:  04 April 1995      Accepted manuscript online: 
PACS:  85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))  
  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  42.79.Dj (Gratings)  
  42.79.Gn (Optical waveguides and couplers)  
  73.20.Mf (Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))  
  78.67.De (Quantum wells)  

Cite this article: 

WANG WEN-XIN (王文新), HU QIANG (胡强), HUANG QI (黄绮), ZHOU JUN-MING (周均铭), CUI DA-FU (崔大复), CHEN ZHENG-HAO (陈正豪) NORMAL-INCIDENCE QUANTUM WELL INFRARED PHOTODETECTOR WITHOUT GRATING COUPLER 1995 Acta Physica Sinica (Overseas Edition) 4 806

[1] A polarization mismatched p-GaN/p-Al0.25Ga0.75N/p-GaN structure to improve the hole injection for GaN based micro-LED with secondary etched mesa
Yidan Zhang(张一丹), Chunshuang Chu(楚春双), Sheng Hang(杭升), Yonghui Zhang(张勇辉),Quan Zheng(郑权), Qing Li(李青), Wengang Bi(毕文刚), and Zihui Zhang(张紫辉). Chin. Phys. B, 2023, 32(1): 018509.
[2] Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB
Hong Wang(王虹), Zunren Lv(吕尊仁), Shuai Wang(汪帅), Haomiao Wang(王浩淼), Hongyu Chai(柴宏宇), Xiaoguang Yang(杨晓光), Lei Meng(孟磊), Chen Ji(吉晨), and Tao Yang(杨涛). Chin. Phys. B, 2022, 31(9): 098104.
[3] Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
Li Zhang(张力), Dong Pan(潘东), Yuanjie Chen(陈元杰), Jianhua Zhao(赵建华), and Hongqi Xu(徐洪起). Chin. Phys. B, 2022, 31(9): 098507.
[4] A double quantum dot defined by top gates in a single crystalline InSb nanosheet
Yuanjie Chen(陈元杰), Shaoyun Huang(黄少云), Jingwei Mu(慕经纬), Dong Pan(潘东), Jianhua Zhao(赵建华), and Hong-Qi Xu(徐洪起). Chin. Phys. B, 2021, 30(12): 128501.
[5] Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy
Xiang-Peng Zhou(周祥鹏), Hai-Bing Qiu(邱海兵), Wen-Xian Yang(杨文献), Shu-Long Lu(陆书龙), Xue Zhang(张雪), Shan Jin(金山), Xue-Fei Li(李雪飞), Li-Feng Bian(边历峰), and Hua Qin(秦华). Chin. Phys. B, 2021, 30(12): 127301.
[6] Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector
Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振). Chin. Phys. B, 2021, 30(8): 087303.
[7] Micro-scale photon source in a hybrid cQED system
Ming-Bo Chen(陈明博), Bao-Chuan Wang(王保传), Si-Si Gu(顾思思), Ting Lin(林霆), Hai-Ou Li(李海欧), Gang Cao(曹刚), and Guo-Ping Guo(郭国平). Chin. Phys. B, 2021, 30(4): 048507.
[8] Controlling the entropic uncertainty and quantum discord in two two-level systems by an ancilla in dissipative environments
Rong-Yu Wu(伍容玉) and Mao-Fa Fang(方卯发). Chin. Phys. B, 2021, 30(3): 037302.
[9] Dynamics of entropic uncertainty for three types of three-level atomic systems under the random telegraph noise
Xiong Xu(许雄), Mao-Fa Fang(方卯发). Chin. Phys. B, 2020, 29(5): 057305.
[10] Reduction of entropy uncertainty for qutrit system under non-Markov noisy environment
Xiong Xu(许雄), Mao-Fa Fang(方卯发). Chin. Phys. B, 2020, 29(4): 040306.
[11] A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector
Xuan-Zhang Li(李炫璋), Ling Sun(孙令), Jin-Lei Lu(鲁金蕾), Jie Liu(刘洁), Chen Yue(岳琛), Li-Li Xie(谢莉莉), Wen-Xin Wang(王文新), Hong Chen(陈弘), Hai-Qiang Jia(贾海强), Lu Wang(王禄). Chin. Phys. B, 2020, 29(3): 038504.
[12] InP quantum dots-based electroluminescent devices
Qianqian Wu(吴倩倩), Fan Cao(曹璠), Lingmei Kong(孔令媚), Xuyong Yang(杨绪勇). Chin. Phys. B, 2019, 28(11): 118103.
[13] Progress in quantum well and quantum cascade infrared photodetectors in SITP
Xiaohao Zhou(周孝好), Ning Li(李宁), Wei Lu(陆卫). Chin. Phys. B, 2019, 28(2): 027801.
[14] Recent progress of infrared photodetectors based on lead chalcogenide colloidal quantum dots
Jinming Hu(胡津铭), Yuansheng Shi(史源盛), Zhenheng Zhang(张珍衡), Ruonan Zhi(智若楠), Shengyi Yang(杨盛谊), Bingsuo Zou(邹炳锁). Chin. Phys. B, 2019, 28(2): 020701.
[15] 1.3-μm InAs/GaAs quantum dots grown on Si substrates
Fu-Hui Shao(邵福会), Yi Zhang(张一), Xiang-Bin Su(苏向斌), Sheng-Wen Xie(谢圣文), Jin-Ming Shang(尚金铭), Yun-Hao Zhao(赵云昊), Chen-Yuan Cai(蔡晨元), Ren-Chao Che(车仁超), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2018, 27(12): 128105.
No Suggested Reading articles found!