STUDY OF THE MECHANISM OF GaAs(001) MOLECULAR-BEAM EPITAXY

doi:10.1088/1004-423X/4/10/004

Abstract

Abstract In this paper the nucleation and growth processes of GaAs(001) molecular-beam epitaxy were studied by Monte Carlo simulation, The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures, and the island size distribution at low coverage, as well as the correlation function between atoms and its relation with the temperature were studied in detail.

Received: 06 September 1994
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)

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MAO HUI-BING (茅惠兵), LU WEI (陆卫), SHEN XUE-CHU (沈学础) STUDY OF THE MECHANISM OF GaAs(001) MOLECULAR-BEAM EPITAXY 1995 Acta Physica Sinica (Overseas Edition) 4 757

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STUDY OF THE MECHANISM OF GaAs(001) MOLECULAR-BEAM EPITAXY

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