MONTE CARLO SIMULATION OF THE ION BEAM ENHANCED DEPOSITION OF SILICON NITRIDE FILMS
SHAO QI-YUN (邵其鋆), PAN ZHENG-YING (潘正瑛)
Department of Physics II, Fudan University, Shanghai 200433, China; Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Abstract In this paper, the growth process of silicon nitride films by ion beam enhanced depo-sition (IBED) is investigated by using the dynamic Monte Carlo simulation, which is based on the binary collision approximation. The effects of the incident angles, energies of the bombarded ions and the interaction potentials on the composition of the films are discussed. The successive and alternate deposition process of silicon and implantation of nitrogen ions have been applied to simulate the actual continuous and synchronous process of IBED. The relationship between the calculated composition of the films and the ion/atom arrival ratio of implanted nitrogen ions to deposited silicon atoms has been established. The composition profile obtained by computer simulation is in good agreement with the experimental results.
Received: 25 October 1993
Accepted manuscript online:
PACS:
81.15.Jj
(Ion and electron beam-assisted deposition; ion plating)
Fund: Project supported by the National Natural Science Foundation of China.
Cite this article:
SHAO QI-YUN (邵其鋆), PAN ZHENG-YING (潘正瑛) MONTE CARLO SIMULATION OF THE ION BEAM ENHANCED DEPOSITION OF SILICON NITRIDE FILMS 1994 Acta Physica Sinica (Overseas Edition) 3 690
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