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Acta Physica Sinica (Overseas Edition), 1994, Vol. 3(9): 682-689    DOI: 10.1088/1004-423X/3/9/005
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD

CHEN JUN-FANG (陈俊芳)a, CHENG SHAO-YU (程绍玉)a, REN ZHAO-XING (任兆杏)a, ZHANG SU-QING (张束清)a, NING ZHAO-YUAN (宁兆元)b, WU XUE-MEI (吴雪梅)b
a Institute of Plasma Physics, Academia Sinica, Hefei 230031, China b Department of Physics Suzhou University, Suzhou 215006, China;
Abstract  In this paper, the effect of temperature on the composition and structure of the Si3N4 thin film is investigated. X-ray diffraction pattern and transmission electron microscope (TEM) analyses show that the Si3N4 film undergoes the transition from amorphous to crystalline phase with increasing deposition temperature. Infra-red qualitative analysis shows that the content of hydrogen decreases with increasing deposition temperature.The stoichiometric of Si3N4 is investigated by X-ray photoelectron spectroscopy or electron spectroscopy for chemical analysis.
Received:  22 July 1993      Accepted manuscript online: 
PACS:  68.55.Nq (Composition and phase identification)  
  68.55.A- (Nucleation and growth)  
  68.55.-a (Thin film structure and morphology)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  64.70.K-  
  61.50.Nw (Crystal stoichiometry)  

Cite this article: 

CHEN JUN-FANG (陈俊芳), CHENG SHAO-YU (程绍玉), REN ZHAO-XING (任兆杏), ZHANG SU-QING (张束清), NING ZHAO-YUAN (宁兆元), WU XUE-MEI (吴雪梅) INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD 1994 Acta Physica Sinica (Overseas Edition) 3 682

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