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Other articles related with "silicon-based"：
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60312 |
Rong-Long Ma(马荣龙), Ming Ni(倪铭), Yu-Chen Zhou(周雨晨), Zhen-Zhen Kong(孔真真), Gui-Lei Wang(王桂磊), Di Liu(刘頔), Gang Luo(罗刚), Gang Cao(曹刚), Hai-Ou Li(李海欧), and Guo-Ping Guo(郭国平) |
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Electric field dependence of spin qubit in a Si-MOS quantum dot |
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Chin. Phys. B
2024 Vol.33 (6): 60312-060312
[Abstract]
(32)
[HTML 1 KB]
[PDF 730 KB]
(19)
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24201 |
Le-Liang Li(李乐良), Gui-Ke Li(李贵柯), Zhao Zhang(张钊), Jian Liu(刘剑), Nan-Jian Wu(吴南健), Kai-You Wang(王开友), Nan Qi(祁楠), and Li-Yuan Liu(刘力源) |
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Silicon-based optoelectronic heterogeneous integration for optical interconnection |
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Chin. Phys. B
2024 Vol.33 (2): 24201-024201
[Abstract]
(130)
[HTML 0 KB]
[PDF 3660 KB]
(146)
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37303 |
Zhiwei Huang(黄志伟), Shaoying Ke(柯少颖), Jinrong Zhou(周锦荣), Yimo Zhao(赵一默), Wei Huang(黄巍), Songyan Chen(陈松岩), and Cheng Li(李成) |
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High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode |
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Chin. Phys. B
2021 Vol.30 (3): 37303-
[Abstract]
(461)
[HTML 1 KB]
[PDF 2033 KB]
(157)
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64212 |
Zhen Liu(刘振), Wei-Guo Jia(贾维国), Hong-Yu Wang(王红玉), Yang Wang(汪洋), Neimule Men-Ke(门克内木乐), Jun-Ping Zhang(张俊萍) |
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Effect of dark soliton on the spectral evolution of bright soliton in a silicon-on-insulator waveguide |
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Chin. Phys. B
2020 Vol.29 (6): 64212-064212
[Abstract]
(573)
[HTML 1 KB]
[PDF 2058 KB]
(96)
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14203 |
Zhen Liu(刘振), Weiguo Jia(贾维国), Yang Wang(汪洋), Hongyu Wang(王红玉), Neimule Men-Ke(门克内木乐), Jun-Ping Zhang(张俊萍) |
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Propagation characteristics of parallel dark solitons in silicon-on-insulator waveguide |
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Chin. Phys. B
2020 Vol.29 (1): 14203-014203
[Abstract]
(541)
[HTML 1 KB]
[PDF 4913 KB]
(129)
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104209 |
Li-Fei Tian(田立飞), Ying-Xin Kuang(匡迎新), Zhong-Chao Fan(樊中朝), Zhi-Yong Li(李智勇) |
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Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry-Perot cavity |
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Chin. Phys. B
2019 Vol.28 (10): 104209-104209
[Abstract]
(628)
[HTML 1 KB]
[PDF 1528 KB]
(163)
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18503 |
Wang Wei(王伟), Huang Bei-Ju(黄北举), Dong Zan(董赞), and Chen Hong-Da(陈弘达) |
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Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology |
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Chin. Phys. B
2011 Vol.20 (1): 18503-018503
[Abstract]
(1798)
[HTML 0 KB]
[PDF 1499 KB]
(1062)
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