Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry-Perot cavity

doi:10.1088/1674-1056/ab427c

Abstract

The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective materials outside the Fabry-Perot cavity is demonstrated in this paper. The reflectivity values of the outside-cavity materials with different film layer numbers are simulated. The reflectivity values of 6-pair Ta₂O₅/SiO₂ films at 1550 nm are experimentally verified to be as high as 99.9%. The surfaces of 6-pair Ta₂O₅/SiO₂ films are smooth:their root-mean-square roughness values are as small as 0.53 nm. The insertion loss of the device at 1550 nm is only 1.2 dB. The high extinction ratio of the device at 1550 nm and 11 V is achieved to be 29.7 dB. The spatial light modulator has a high extinction ratio and low insertion loss for applications.

Keywords: spatial light modulator high reflective materials silicon-based Fabry-Perot cavity

Received: 19 June 2019
Revised: 10 July 2019
Accepted manuscript online:

PACS:	42.79.Hp	(Optical processors, correlators, and modulators)
	42.79.Fm	(Reflectors, beam splitters, and deflectors)
	95.85.Jq	(Near infrared (0.75-3 μm))
	71.20.Mq	(Elemental semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61575076 and 61804148) and the National Key Research and Development Plan of China (Grant No. 2016YFB0402502).

Corresponding Authors: Zhong-Chao Fan, Zhi-Yong Li
E-mail: zcfan@semi.ac.cn;lizhy@semi.ac.cn

Cite this article:

Li-Fei Tian(田立飞), Ying-Xin Kuang(匡迎新), Zhong-Chao Fan(樊中朝), Zhi-Yong Li(李智勇) Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry-Perot cavity 2019 Chin. Phys. B 28 104209

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Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry-Perot cavity

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