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Other articles related with "proton irradiation":
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87301 |
Tao Zhang(张涛), Ruo-Han Li(李若晗), Kai Su(苏凯), Hua-Ke Su(苏华科), Yue-Guang Lv(吕跃广), Sheng-Rui Xu(许晟瑞), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
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Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes |
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Chin. Phys. B
2023 Vol.32 (8): 87301-087301
[Abstract]
(167)
[HTML 0 KB]
[PDF 848 KB]
(243)
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86106 |
Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚) |
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Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors |
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Chin. Phys. B
2022 Vol.31 (8): 86106-086106
[Abstract]
(354)
[HTML 1 KB]
[PDF 1146 KB]
(119)
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57102 |
Guo-Dong Xiong(熊国栋), Hui-Ping Zhu(朱慧平), Lei Wang(王磊), Bo Li(李博), Fa-Zhan Zhao(赵发展), and Zheng-Sheng Han(韩郑生) |
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Evolution of optical properties and molecular structure of PCBM films under proton irradiation |
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Chin. Phys. B
2022 Vol.31 (5): 57102-057102
[Abstract]
(326)
[HTML 0 KB]
[PDF 2543 KB]
(61)
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107702 |
Yu Zhao(赵瑜), Wen-Yue Zhao(赵文悦), Dan-Dan Ju(琚丹丹), Yue-Yue Yao(姚月月), Hao Wang(王豪), Cheng-Yue Sun(孙承月), Ya-Zhou Peng(彭亚洲), Yi-Yong Wu(吴宜勇), and Wei-Dong Fei(费维栋) |
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Irradiation behavior and recovery effect of ferroelectric properties of PZT thin films |
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Chin. Phys. B
2021 Vol.30 (10): 107702-107702
[Abstract]
(464)
[HTML 0 KB]
[PDF 722 KB]
(139)
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70702 |
Jia-Jia Zhang(张佳佳), Peng Ding(丁芃), Ya-Nan Jin(靳雅楠), Sheng-Hao Meng(孟圣皓), Xiang-Qian Zhao(赵向前), Yan-Fei Hu(胡彦飞), Ying-Hui Zhong(钟英辉), and Zhi Jin(金智) |
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A comparative study on radiation reliability of composite channel InP high electron mobility transistors |
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Chin. Phys. B
2021 Vol.30 (7): 70702-070702
[Abstract]
(481)
[HTML 1 KB]
[PDF 1188 KB]
(170)
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27303 |
Jin-Jin Tang(汤金金), Gui-Peng Liu(刘贵鹏), Jia-Yu Song(宋家毓), Gui-Juan Zhao(赵桂娟), and Jian-Hong Yang(杨建红) |
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Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation |
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Chin. Phys. B
2021 Vol.30 (2): 27303-0
[Abstract]
(428)
[HTML 1 KB]
[PDF 761 KB]
(118)
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38502 |
Ying-Hui Zhong(钟英辉), Bo Yang(杨博), Ming-Ming Chang(常明铭), Peng Ding(丁芃), Liu-Hong Ma(马刘红), Meng-Ke Li(李梦珂), Zhi-Yong Duan(段智勇), Jie Yang(杨洁), Zhi Jin(金智), Zhi-Chao Wei(魏志超) |
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Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane |
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Chin. Phys. B
2020 Vol.29 (3): 38502-038502
[Abstract]
(566)
[HTML 1 KB]
[PDF 714 KB]
(149)
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76106 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞) |
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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2019 Vol.28 (7): 76106-076106
[Abstract]
(632)
[HTML 1 KB]
[PDF 1215 KB]
(211)
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28502 |
Shu-Xiang Sun(孙树祥), Zhi-Chao Wei(魏志超), Peng-Hui Xia(夏鹏辉), Wen-Bin Wang(王文斌), Zhi-Yong Duan(段智勇), Yu-Xiao Li(李玉晓), Ying-Hui Zhong(钟英辉), Peng Ding(丁芃), Zhi Jin(金智) |
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Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs |
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Chin. Phys. B
2018 Vol.27 (2): 28502-028502
[Abstract]
(630)
[HTML 0 KB]
[PDF 1730 KB]
(276)
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88501 |
Bing Ye(叶兵), Jie Liu(刘杰), Tie-Shan Wang(王铁山), Tian-Qi Liu(刘天奇), Jie Luo(罗捷), Bin Wang(王斌), Ya-Nan Yin(殷亚楠), Qing-Gang Ji(姬庆刚), Pei-Pei Hu(胡培培), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东) |
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Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell |
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Chin. Phys. B
2017 Vol.26 (8): 88501-088501
[Abstract]
(725)
[HTML 1 KB]
[PDF 1372 KB]
(244)
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98501 |
Li Xing-Ji (李兴冀), Liu Chao-Ming (刘超铭), Sun Zhong-Liang (孙中亮), Xiao Li-Yi (肖立伊), He Shi-Yu (何世禹) |
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Effect of ionizing radiation on dual 8-bit analog-to-digital converters (AD9058) with various dose rates and bias conditions |
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Chin. Phys. B
2013 Vol.22 (9): 98501-098501
[Abstract]
(671)
[HTML 1 KB]
[PDF 346 KB]
(505)
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16103 |
Cheng Xiu-Wei(程秀围), Guan Qing-Feng(关庆丰), Fan Xian-Hong(范鲜红), and Chen Bo(陈波) |
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Effect of vacancy defect clusters on the optical property of the aluminium filter used for the space solar telescope |
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Chin. Phys. B
2010 Vol.19 (1): 16103-016103
[Abstract]
(1462)
[HTML 1 KB]
[PDF 3758 KB]
(869)
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