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Other articles related with "metal gate"：
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128502 |
Wei-Tai Gong(巩伟泰), Yan Li(李闫), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), and Xiao-Jin Li(李小进) |
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Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process |
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Chin. Phys. B
2023 Vol.32 (12): 128502-128502
[Abstract]
(126)
[HTML 0 KB]
[PDF 823 KB]
(35)
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108502 |
Zi-Miao Zhao(赵梓淼), Zi-Xin Chen(陈子馨), Wei-Jing Liu(刘伟景), Nai-Yun Tang(汤乃云), Jiang-Nan Liu(刘江南), Xian-Ting Liu(刘先婷), Xuan-Lin Li(李宣霖), Xin-Fu Pan(潘信甫), Min Tang(唐敏), Qing-Hua Li(李清华), Wei Bai(白伟), and Xiao-Dong Tang(唐晓东) |
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Ambipolar performance improvement of the C-shaped pocket TFET with dual metal gate and gate-drain underlap |
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Chin. Phys. B
2023 Vol.32 (10): 108502-108502
[Abstract]
(104)
[HTML 0 KB]
[PDF 1029 KB]
(21)
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97306 |
Yong-Liang Li(李永亮), Qiu-Xia Xu(徐秋霞), Wen-Wu Wang(王文武) |
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Key technologies for dual high-k and dual metal gate integration |
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Chin. Phys. B
2018 Vol.27 (9): 97306-097306
[Abstract]
(615)
[HTML 1 KB]
[PDF 1824 KB]
(166)
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87304 |
Yanrong Wang(王艳蓉), Hong Yang(杨红), Hao Xu(徐昊), Weichun Luo(罗维春), Luwei Qi(祁路伟), Shuxiang Zhang(张淑祥), Wenwu Wang(王文武), Jiang Yan(闫江), Huilong Zhu(朱慧珑), Chao Zhao(赵超), Dapeng Chen(陈大鹏), Tianchun Ye(叶甜春) |
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Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process |
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Chin. Phys. B
2017 Vol.26 (8): 87304-087304
[Abstract]
(875)
[HTML 1 KB]
[PDF 1310 KB]
(239)
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87306 |
Hao Xu(徐昊), Hong Yang(杨红), Yan-Rong Wang(王艳蓉), Wen-Wu Wang(王文武), Wei-Chun Luo(罗维春), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春) |
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Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation |
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Chin. Phys. B
2016 Vol.25 (8): 87306-087306
[Abstract]
(756)
[HTML 1 KB]
[PDF 349 KB]
(530)
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87305 |
Hao Xu(徐昊), Hong Yang(杨红), Wei-Chun Luo(罗维春), Ye-Feng Xu(徐烨峰), Yan-Rong Wang(王艳蓉), Bo Tang(唐波), Wen-Wu Wang(王文武), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Jiang Yan(闫江), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春) |
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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations |
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Chin. Phys. B
2016 Vol.25 (8): 87305-087305
[Abstract]
(638)
[HTML 1 KB]
[PDF 1174 KB]
(567)
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37308 |
Jinjuan Xiang(项金娟), Yuqiang Ding(丁玉强), Liyong Du(杜立永), Junfeng Li(李俊峰),Wenwu Wang(王文武), Chao Zhao(赵超) |
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Growth mechanism of atomic-layer-deposited TiAlC metal gatebased on TiCl4 and TMA precursors |
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Chin. Phys. B
2016 Vol.25 (3): 37308-037308
[Abstract]
(851)
[HTML 0 KB]
[PDF 1486 KB]
(986)
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117306 |
Wang Yan-Rong (王艳蓉), Yang Hong (杨红), Xu Hao (徐昊), Wang Xiao-Lei (王晓磊), Luo Wei-Chun (罗维春), Qi Lu-Wei (祁路伟), Zhang Shu-Xiang (张淑祥), Wang Wen-Wu (王文武), Yan Jiang (闫江), Zhu Hui-Long (朱慧珑), Zhao Chao (赵超), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春) |
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Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process |
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Chin. Phys. B
2015 Vol.24 (11): 117306-117306
[Abstract]
(619)
[HTML 1 KB]
[PDF 545 KB]
(362)
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77304 |
Ren Shang-Qing (任尚清), Yang Hong (杨红), Wang Wen-Wu (王文武), Tang Bo (唐波), Tang Zhao-Yun (唐兆云), Wang Xiao-Lei (王晓磊), Xu Hao (徐昊), Luo Wei-Chun (罗维春), Zhao Chao (赵超), Yan Jiang (闫江), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春) |
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Energy distribution extraction of negative charges responsible for positive bias temperature instability |
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Chin. Phys. B
2015 Vol.24 (7): 77304-077304
[Abstract]
(592)
[HTML 1 KB]
[PDF 410 KB]
(296)
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117702 |
Han Kai (韩锴), Wang Xiao-Lei (王晓磊), Xu Yong-Gui (徐永贵), Yang Hong (杨红), Wang Wen-Wu (王文武) |
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Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack |
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Chin. Phys. B
2014 Vol.23 (11): 117702-117702
[Abstract]
(499)
[HTML 1 KB]
[PDF 435 KB]
(432)
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97303 |
Huang An-Ping(黄安平), Zheng Xiao-Hu(郑晓虎), Xiao Zhi-Song(肖志松), Yang Zhi-Chao(杨智超), Wang Mei(王玫), Paul K. Chu(朱剑豪), and Yang Xiao-Dong(杨晓东) |
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Flat-band voltage shift in metal-gate/high-k/Si stacks |
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Chin. Phys. B
2011 Vol.20 (9): 97303-097303
[Abstract]
(1354)
[HTML 1 KB]
[PDF 551 KB]
(3182)
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