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Other articles related with "heavy ion irradiation"：
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96102 |
Qiyu Chen(陈麒宇), Xirong Yang(杨西荣), Zongzhen Li(李宗臻), Jinshun Bi(毕津顺), Kai Xi(习凯),Zhenxing Zhang(张振兴), Pengfei Zhai(翟鹏飞), Youmei Sun(孙友梅), and Jie Liu(刘杰) |
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Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by bm C-V measurement |
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Chin. Phys. B
2023 Vol.32 (9): 96102-096102
[Abstract]
(142)
[HTML 1 KB]
[PDF 839 KB]
(66)
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116102 |
Sheng-Xia Zhang(张胜霞), Jie Liu(刘杰), Hua Xie(谢华), Li-Jun Xu(徐丽君), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Wen-Si Ai(艾文思), Peng-Fei Zhai(翟鹏飞) |
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Vibrational modes in La2Zr2O7 pyrochlore irradiated with disparate electrical energy losses |
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Chin. Phys. B
2019 Vol.28 (11): 116102-116102
[Abstract]
(512)
[HTML 1 KB]
[PDF 1345 KB]
(142)
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106102 |
Sheng-Xia Zhang(张胜霞), Jie Liu(刘杰), Jian Zeng(曾健), Pei-Pei Hu(胡培培), Peng-Fei Zhai(翟鹏飞) |
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Structural modification in swift heavy ion irradiated muscovite mica |
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Chin. Phys. B
2017 Vol.26 (10): 106102-106102
[Abstract]
(724)
[HTML 1 KB]
[PDF 988 KB]
(209)
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116104 |
Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘) |
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Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation |
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Chin. Phys. B
2014 Vol.23 (11): 116104-116104
[Abstract]
(668)
[HTML 1 KB]
[PDF 672 KB]
(413)
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46104 |
Yan Shao-An (燕少安), Tang Ming-Hua (唐明华), Zhao Wen (赵雯), Guo Hong-Xia (郭红霞), Zhang Wan-Li (张万里), Xu Xin-Yu (徐新宇), Wang Xu-Dong (王旭东), Ding Hao (丁浩), Chen Jian-Wei (陈建伟), Li Zheng (李正), Zhou Yi-Chun (周益春) |
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Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation |
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Chin. Phys. B
2014 Vol.23 (4): 46104-046104
[Abstract]
(802)
[HTML 1 KB]
[PDF 756 KB]
(524)
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Single Event Effect in Ferroelectric-Gate FET under Heavy-Ion Irradiation |
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Chin. Phys. B
Vol. (): 0-0
[Abstract]
(53)
[HTML 0 KB]
[PDF 0 KB]
(7)
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117307 |
Xue Shou-Bin(薛守斌), Huang Ru(黄如), Huang De-Tao(黄德涛), Wang Si-Hao(王思浩), Tan Fei(谭斐), Wang Jian(王健), An Xia (安霞), and Zhang Xing(张兴) |
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Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation |
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Chin. Phys. B
2010 Vol.19 (11): 117307-117307
[Abstract]
(1686)
[HTML 1 KB]
[PDF 2091 KB]
(999)
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