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Other articles related with "TCAD simulation"：
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98503 |
Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yahui Feng(冯亚辉), Yinong Liu(刘以农), Jinxin Zhang(张晋新), Jun Fu(付军), and Guofang Yu(喻国芳) |
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Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications |
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Chin. Phys. B
2023 Vol.32 (9): 98503-098503
[Abstract]
(156)
[HTML 1 KB]
[PDF 6512 KB]
(86)
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68502 |
Rongxing Cao(曹荣幸), Kejia Wang(汪柯佳), Yang Meng(孟洋), Linhuan Li(李林欢), Lin Zhao(赵琳), Dan Han(韩丹), Yang Liu(刘洋), Shu Zheng(郑澍), Hongxia Li(李红霞), Yuqi Jiang(蒋煜琪), Xianghua Zeng(曾祥华), and Yuxiong Xue(薛玉雄) |
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Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs |
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Chin. Phys. B
2023 Vol.32 (6): 68502-068502
[Abstract]
(223)
[HTML 0 KB]
[PDF 1436 KB]
(103)
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28504 |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平) |
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Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation |
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Chin. Phys. B
2023 Vol.32 (2): 28504-028504
[Abstract]
(334)
[HTML 1 KB]
[PDF 1582 KB]
(149)
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128501 |
Manhong Zhang(张满红) and Wanchen Wu(武万琛) |
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An insulated-gate bipolar transistor model based on the finite-volume charge method |
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Chin. Phys. B
2022 Vol.31 (12): 128501-128501
[Abstract]
(433)
[HTML 0 KB]
[PDF 953 KB]
(46)
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56106 |
Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰) |
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Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology |
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Chin. Phys. B
2022 Vol.31 (5): 56106-056106
[Abstract]
(489)
[HTML 1 KB]
[PDF 2993 KB]
(147)
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67302 |
Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟), Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵) |
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Device topological thermal management of β-Ga2O3 Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (6): 67302-067302
[Abstract]
(515)
[HTML 1 KB]
[PDF 1138 KB]
(249)
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38501 |
He-Kun Zhang(章合坤), Xuan Tian(田璇), Jun-Peng He(何俊鹏), Zhe Song(宋哲), Qian-Qian Yu(蔚倩倩), Liang Li(李靓), Ming Li(李明), Lian-Cheng Zhao(赵连城), Li-Ming Gao(高立明) |
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Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation |
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Chin. Phys. B
2020 Vol.29 (3): 38501-038501
[Abstract]
(869)
[HTML 1 KB]
[PDF 964 KB]
(199)
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68503 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏) |
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Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD |
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Chin. Phys. B
2019 Vol.28 (6): 68503-068503
[Abstract]
(654)
[HTML 1 KB]
[PDF 1876 KB]
(151)
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18501 |
Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯) |
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Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM |
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Chin. Phys. B
2017 Vol.26 (1): 18501-018501
[Abstract]
(888)
[HTML 1 KB]
[PDF 310 KB]
(445)
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118501 |
Ding Li-Li (丁李利), Chen Wei (陈伟), Guo Hong-Xia (郭红霞), Yan Yi-Hua (闫逸华), Guo Xiao-Qiang (郭晓强), Fan Ru-Yu (范如玉) |
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Scaling effects of single-event gate rupture in thin oxides |
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Chin. Phys. B
2013 Vol.22 (11): 118501-118501
[Abstract]
(649)
[HTML 1 KB]
[PDF 378 KB]
(391)
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