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Other articles related with "GeSn"：
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17201 |
Panpan Huang(黄盼盼), Youlu Zhang(张有禄), Kai Hu(胡凯), Jingbo Qi(齐静波), Dainan Zhang(张岱南), and Liang Cheng(程亮) |
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Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy |
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Chin. Phys. B
2024 Vol.33 (1): 17201-17201
[Abstract]
(86)
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[PDF 977 KB]
(37)
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68401 |
Dong Zhang(张栋), Jianjun Song(宋建军), Xiaohuan Xue(薛笑欢), and Shiqi Zhang(张士琦) |
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A high rectification efficiency Si0.14Ge0.72Sn0.14–Ge0.82Sn0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission |
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Chin. Phys. B
2022 Vol.31 (6): 68401-068401
[Abstract]
(300)
[HTML 1 KB]
[PDF 1638 KB]
(58)
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58801 |
Xin-Miao Zhu(朱鑫淼), Min Cui(崔敏), Yu Wang(汪宇), Tian-Jing Yu(于添景),Jin-Xiang Deng(邓金祥), and Hong-Li Gao(高红丽) |
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GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model |
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Chin. Phys. B
2022 Vol.31 (5): 58801-058801
[Abstract]
(371)
[HTML 1 KB]
[PDF 2100 KB]
(85)
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128501 |
Yue Zhao(赵越), Nan Wang(王楠), Kai Yu(余凯), Xiaoming Zhang(张晓明), Xiuli Li(李秀丽), Jun Zheng(郑军), Chunlai Xue(薛春来), Buwen Cheng(成步文), Chuanbo Li(李传波) |
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High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application |
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Chin. Phys. B
2019 Vol.28 (12): 128501-128501
[Abstract]
(807)
[HTML 1 KB]
[PDF 774 KB]
(236)
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127402 |
Xiaohuai Wang(王小怀), Chengzhao Chen(陈城钊), Shengqi Feng(冯胜奇), Xinyuan Wei(魏心源), Yun Li(李云) |
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A hybrid functional first-principles study on the band structure of non-strained Ge1-xSnx alloys |
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Chin. Phys. B
2017 Vol.26 (12): 127402-127402
[Abstract]
(590)
[HTML 0 KB]
[PDF 3989 KB]
(283)
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116802 |
Lu Zhang(张璐), Hai-Yang Hong(洪海洋), Yi-Sen Wang(王一森), Cheng Li(李成), Guang-Yang Lin(林光杨), Song-Yan Chen(陈松岩), Wei Huang(黄巍), Jian-Yuan Wang(汪建元) |
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Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate |
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Chin. Phys. B
2017 Vol.26 (11): 116802-116802
[Abstract]
(522)
[HTML 1 KB]
[PDF 1908 KB]
(241)
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56801 |
H Mahmodi, M R Hashim |
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Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1-xSnx films on Si substrate |
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Chin. Phys. B
2017 Vol.26 (5): 56801-056801
[Abstract]
(574)
[HTML 0 KB]
[PDF 2375 KB]
(386)
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24211 |
Zhang Dong-Liang (张东亮), Cheng Bu-Wen (成步文), Xue Chun-Lai (薛春来), Zhang Xu (张旭), Cong Hui (丛慧), Liu Zhi (刘智), Zhang Guang-Ze (张广泽), Wang Qi-Ming (王启明) |
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Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser |
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Chin. Phys. B
2015 Vol.24 (2): 24211-024211
[Abstract]
(745)
[HTML 0 KB]
[PDF 359 KB]
(419)
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88112 |
Tao Ping (陶平), Huang Lei (黄磊), Cheng H H, Wang Huan-Hua (王焕华), Wu Xiao-Shan (吴小山) |
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Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature |
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Chin. Phys. B
2014 Vol.23 (8): 88112-088112
[Abstract]
(612)
[HTML 1 KB]
[PDF 500 KB]
(533)
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68103 |
Wang Wei (汪巍), Su Shao-Jian (苏少坚), Zheng Jun (郑军), Zhang Guang-Ze (张广泽), Zuo Yu-Hua (左玉华), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明) |
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Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates |
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Chin. Phys. B
2011 Vol.20 (6): 68103-068103
[Abstract]
(1396)
[HTML 1 KB]
[PDF 3808 KB]
(1358)
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