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Other articles related with "6H-SiC"：
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86107 |
Zheng Han(韩铮), Xu Wang(王旭), Jiao Wang(王娇), Qing Liao(廖庆), and Bingsheng Li(李炳生) |
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Formation of nano-twinned 3C-SiC grains in Fe-implanted 6H-SiC after 1500-℃ annealing |
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Chin. Phys. B
2021 Vol.30 (8): 86107-086107
[Abstract]
(479)
[HTML 1 KB]
[PDF 5811 KB]
(158)
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46106 |
Meng-Lin Qiu(仇猛淋), Peng Yin(殷鹏), Guang-Fu Wang(王广甫), Ji-Gao Song(宋纪高), Chang-Wei Luo(罗长维), Ting-Shun Wang(王庭顺), Guo-Qiang Zhao(赵国强), Sha-Sha Lv(吕沙沙), Feng-Shou Zhang(张丰收), Bin Liao(廖斌) |
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In situ luminescence measurement of 6H-SiC at low temperature |
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Chin. Phys. B
2020 Vol.29 (4): 46106-046106
[Abstract]
(883)
[HTML 1 KB]
[PDF 1479 KB]
(162)
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27505 |
Wang Hui (王辉), Yan Cheng-Feng (严成锋), Kong Hai-Kuan (孔海宽), Chen Jian-Jun (陈建军), Xin Jun (忻隽), Shi Er-Wei (施尔畏 ) |
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Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder |
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Chin. Phys. B
2013 Vol.22 (2): 27505-027505
[Abstract]
(839)
[HTML 1 KB]
[PDF 298 KB]
(653)
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16301 |
Lin Jing-Jing (林菁菁), Guo Li-Wei (郭丽伟), Jia Yu-Ping (贾玉萍), Chen Lian-Lian (陈莲莲), Lu Wei (芦伟), Huang Jiao (黄郊), Chen Xiao-Long (陈小龙) |
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Effect of 6H-SiC (1120) substrate on epitaxial graphene revealed by Raman scattering |
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Chin. Phys. B
2013 Vol.22 (1): 16301-016301
[Abstract]
(1063)
[HTML 0 KB]
[PDF 417 KB]
(644)
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96801 |
Chang Shao-Hui (常少辉), Liu Xue-Chao (刘学超), Huang Wei (黄维), Xiong Ze (熊泽), Yang Jian-Hua (杨建华), Shi Er-Wei (施尔畏) |
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Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing |
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Chin. Phys. B
2012 Vol.21 (9): 96801-096801
[Abstract]
(1145)
[HTML 1 KB]
[PDF 7350 KB]
(1162)
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67503 |
Zhuo Shi-Yi(卓世异), Liu Xue-Chao(刘学超), Xiong Ze(熊泽), Yan Wen-Sheng(闫文盛), Xin Jun(忻隽), Yang Jian-Hua(杨建华), and Shi Er-Wei(施尔畏) |
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Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal |
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Chin. Phys. B
2012 Vol.21 (6): 67503-067503
[Abstract]
(1588)
[HTML 1 KB]
[PDF 146 KB]
(971)
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116101 |
Chang Shao-Hui(常少辉), Chen Zhi-Zhan(陈之战), Huang Wei(黄维), Liu Xue-Chao(刘学超), Chen Bo-Yuan(陈博源), Li Zheng-Zheng(李铮铮), and Shi Er-Wei(施尔畏) |
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Band alignment of Ga2O3/6H-SiC heterojunction |
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Chin. Phys. B
2011 Vol.20 (11): 116101-116101
[Abstract]
(1387)
[HTML 0 KB]
[PDF 650 KB]
(942)
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4966 |
Zhu Feng(朱峰), Chen Zhi-Ming(陈治明), Li Lian-Bi(李连碧), Zhao Shun-Feng(赵顺峰), and Lin Tao(林涛) |
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SiC based Si/SiC heterojunction and its rectifying characteristics |
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Chin. Phys. B
2009 Vol.18 (11): 4966-4969
[Abstract]
(1826)
[HTML 1 KB]
[PDF 2369 KB]
(862)
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583 |
Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠) |
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6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension |
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Chin. Phys. B
2005 Vol.14 (3): 583-585
[Abstract]
(1124)
[HTML 0 KB]
[PDF 223 KB]
(673)
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1110 |
Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠) |
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Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs |
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Chin. Phys. B
2004 Vol.13 (7): 1110-1113
[Abstract]
(1134)
[HTML 0 KB]
[PDF 190 KB]
(409)
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157 |
Xue Qi-zhen (薛其贞), Xue Qi-kun (薛其坤), S. Kuwano, K. Nakayama, T. Sakurai |
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GROWTH MODE AND SURFACE RECONSTRUCTION OF GaN(000$\bar{1}$) THIN FILMS ON 6H-SiC(000$\bar{1}$) |
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Chin. Phys. B
2001 Vol.10 (13): 157-162
[Abstract]
(1232)
[HTML 1 KB]
[PDF 662 KB]
(565)
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