Pressure-induced amorphization and metallization in orthorhombic SiP

doi:10.1088/1674-1056/add4f6

Abstract Amorphous states of two-dimensional (2D) materials frequently exhibit remarkable physical properties that differ significantly from their crystalline counterparts. Typically, metastable amorphous states can be achieved through rapid quenching from high temperatures. However, the heating process is detrimental to the structural integrity of 2D materials. In this study, we successfully utilized pressure as an external stimulus to induce an amorphous state in layered crystal SiP. Comprehensive experimental and theoretical investigations revealed metallization in the high-pressure amorphous phase of SiP. The recovered samples were characterized using x-ray diffraction, Raman spectroscopy, high-resolution transmission electron microscopy, and selected area electron diffraction. The results indicate that the metallic amorphous SiP obtained under extreme conditions can be stabilized at ambient conditions. These findings provide a viable pathway for inducing metastable phases in 2D materials and offer new insights into the design and development of advanced electronic devices.

Keywords: crystal-to-amorphous transition metallization layered semiconductors high pressure

Received: 16 February 2025
Revised: 28 April 2025
Accepted manuscript online: 07 May 2025

PACS:	61.43.Dq	(Amorphous semiconductors, metals, and alloys)
	85.40.Ls	(Metallization, contacts, interconnects; device isolation)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	91.60.Hg	(Phase changes)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 42150102) and the Sichuan Science and Technology Program (Grant No. 2023NSFSC1910).

Corresponding Authors: Qiming Wang, Yi Sun
E-mail: qmwang@scu.edu.cn;sunyi@jcu.edu.cn

Cite this article:

Qiru Zeng(曾琪茹), Youjun Zhang(张友君), Yukai Zhuang(庄毓凯), Linfei Yang(杨林飞), Qiming Wang(王齐明), and Yi Sun(孙熠) Pressure-induced amorphization and metallization in orthorhombic SiP 2025 Chin. Phys. B 34 096102

[1] Coak M J, Son S, Daisenberger D, Hamidov H, Haines C R, Alireza P L, Wildes A R, Liu C, Saxena S S and Park J G 2019 Npj Quantum Mater. 4 38
[2] Kim H S, Haule K and Vanderbilt D 2019 Phys. Rev. Lett. 123 236401
[3] Wang Y, Ying J, Zhou Z, Sun J, Wen T, Zhou Y, Li N, Zhang Q, Han F, Xiao Y, Chow P, Yang W, Struzhkin V V, Zhao Y and Mao H 2018 Nat. Commun. 9 1914
[4] Haines C R S, Coak M J, Wildes A R, Lampronti G I, Liu C, Nahai- Williamson P, Hamidov H, Daisenberger D and Saxena S S 2018 Phys. Rev. Lett. 121 266801
[5] Yang Z, Hao J and Lau S P 2020 J. Appl. Phys. 127 220901
[6] Zhao H, Chen X, Wang G, Qiu Y and Guo L 2019 2D Mater. 6 032002
[7] Li N, Peng J, Zhang P and Yue Y 2023 Adv. Mater. 35 2300067
[8] Wu L, Longo A, Dzade N Y, Sharma A, Hendrix M M, Bol A A, De Leeuw N H, Hensen E J and Hofmann J P 2019 T. ChemSusChem 12 4383
[9] Zhang J, Wu J, Guo H, Chen W, Yuan J, Martinez U, Gupta G, Mohite A, Ajayan P M and Lou J 2017 Adv. Mater. 29 1701955
[10] Chen H 1974 Acta Metall. 22 1505
[11] Debenedetti P G and Stillinger F H 2001 Nature 410 259
[12] Du L, Tian Q, Zheng X, Guo W, Liu W, Zhou Y, Shi F and Xu Q 2022 Activity Energy Environ. Mater. 5 912
[13] Liu H, Chen B Q, Pan Y J, Fu C P, Kankala R K, Wang S B and Chen A Z 2021 Sci. Technol. Adv. Mater. 22 695
[14] Liu W, Xu Q, Cui W, Zhu C and Qi Y 2017 Angew. Chem. Int. Ed. 56 1600
[15] Luo Y, Li Q, Tian Y, Liu Y and Chu K 2022 J. Mater. Chem. A 10 1742
[16] Tse J S 1992 J. Chem. Phys. 96 5482
[17] Tse J S and Klein M L 1990 J. Chem. Phys. 92 3992
[18] Han J, Xu S, Sun J, Fang L and Zhu H 2017 RSC Adv. 7 1357
[19] Pandey K, Garg N, Shanavas K, Sharma S M and Sikka S 2011 Appl. Phys. 109 11
[20] Badro J, Gillet P and Barrat J L 1998 Europhys. Lett. 42 643
[21] Wang Y, Zhu J, YangW,Wen T, Pravica M, Liu Z, Hou M, Fei Y, Kang L and Lin Z 2016 Nat. Commun. 7 12214
[22] Swamy V, Kuznetsov A, Dubrovinsky L S, McMillan P F, Prakapenka V B, Shen G and Muddle B C 2006 Phys. Rev. Lett. 96 135702
[23] Awasthi A P and Subhash G 2019 J. Appl. Phys. 125 215901
[24] Sar H, Gao J and Yang X 2021 Sci. Rep. 11 6372
[25] Zhang S, Guo S, Huang Y, Zhu Z, Cai B, Xie M, Zhou W and Zeng H 2016 2D Mater. 4 015030
[26] Mortazavi B, Shahrokhi M, Cuniberti G and Zhuang X 2019 Coatings 9 522
[27] Xu Y, Shi Z, Shi X, Zhang K and Zhang H 2019 Nanoscale 11 14491
[28] Li C, Wang S, Zhang X, Jia N, Yu T, Zhu M, Liu D and Tao X 2017 CrystEngComm 19 6986
[29] Chen C, Ding Z, Zhou Y, Yuan Y, Qian N, Wang J, Wang S, Zhou Y, An C and Zhang M 2024 Sci. China- Phys. Mech. Astron. 67 258211
[30] Barreteau C, Michon B, Besnard C and Giannini E 2016 J. Cryst. Growth 443 75
[31] Larson A C and Von Dreele R B 1985 Rep. LAUR 86-748 (Los Alamos National Laboratory)
[32] Jayaraman A 1983 Rev. Mod. Phys. 55 65
[33] Mao H, Xu J A and Bell P 1986 Res. Solid Earth 91 4673
[34] Zheng F and Li L J 2024 Electronics Micron 187 103707
[35] Chwang R, Smith B and Crowell C 1974 Solid-State Electron. 17 1217
[36] Ramadan A A, Gould R D and Ashour A 1994 Thin Solid Films 239 272
[37] Hafner J and Kresse G 1997 Properties of Complex Inorganic Solids pp. 69-82
[38] Bagayoko D 2014 AIP Adv. 4 127104
[39] Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[40] Kresse G and Furthmüller J 1996 Phys. Rev. B 54 11169
[41] Kresse G and Hafner J 1993 Phys. Rev. B 47 558
[42] Krukau A V, Vydrov O A, Izmaylov A F and Scuseria G E 2006 J. Chem. Phys. 125 224106
[43] Lee J U, Lee S, Ryoo J H, Kang S, Kim T Y, Kim P, Park C H, Park J G and Cheong H 2016 Nano Lett. 16 7433
[44] Kim K, Lim S Y, Kim J, Lee J U, Lee S, Kim P, Park K, Son S, Park C H and Park J G 2019 2D Mater. 6 041001
[45] Ferrari A C and Robertson J 2004 Philos. Trans. R. Soc. Lond. Ser. Math. Phys. Eng. Sci. 362 2477
[46] Li C,Wang S, Li C, Yu T, Jia N, Qiao J, Zhu M, Liu D and Tao X 2018 J. Mater. Chem. C 6 7219
[47] Xie X, Ding J, Wu B, Zheng H, Li S, Wang C T, He J, Liu Z, Wang J T and Duan J 2023 Nanoscale 15 12388
[48] Machon D, Meersman F, Wilding M, Wilson M and McMillan P 2014 Prog. Mater. Sci. 61 216
[49] Zhao J, Liu H, Ehm L, Dong D, Chen Z and Gu G 2013 J. Phys. Condens. Matter 25 125602
[50] Cheng H, Zhang J, Li Y, Li G and Li X 2017 J. Appl. Phys. 121 225902
[51] Dai L, Zhuang Y, Li H, Wu L, Hu H, Liu K, Yang L and Pu C 2017 J. Mater. Chem. C 5 12157
[52] Zhang M G, Chen L, Feng L, Tuo H H, Zhang Y, Wei Q and Li P F 2023 Chin. Phys. B 32 086101
[53] Hu C, Xu Y, Gong Y, Yang D, Li X and Li Y 2022 Phys. Chem. Chem. Phys. 24 10053
[54] Cheng H, Zhang J, Yu P, Gu C, Ren X, Lin C, Li X, Zhao Y, Wang S and Li Y 2020 J. Phys. Chem. C 124 3421
[55] Gao Y, Liu C, Tian C, Zhu C, Huang X and Cui T 2024 Chin. Phys. B 33 126104
[56] Han S, Duan S, Liu Y X,Wang C, Chen X, Sun H R and Liu X B 2023 Chin. Phys. B 32 016101
[57] Bastard G, Brum J and Ferreira R 1991 Solid State Physics 44 229
[58] Kittel C and McEuen P 2018 Introduction to solid state physics (John Wiley & Sons) p. 704
[59] Konschuh S, Gmitra M and Fabian J 2010 Phys. Rev. B 82 245412
[60] Pearce A J, Mariani E and Burkard G 2016 Phys. Rev. B 94 155416
[61] Mogulkoc Y, Modarresi M, Mogulkoc A, Ciftci Y and Alkan B 2017 J. Phys. Chem. Solids 111 458

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Pressure-induced amorphization and metallization in orthorhombic SiP

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