Low leakage current β-Ga2O3 MOS capacitors with ALD deposited Al2O3 gate dielectric using ozone as precursor
Zheng-Yi Liao(廖正一)1, Pai-Wen Fang(方湃文)1, Xing Lu(卢星)1,†, Gang Wang(王钢)1, and Yan-Li Pei(裴艳丽)1,2,‡
1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China; 2 Foshan Institute of Sun Yat-Sen University, Foshan 528225, China
Abstract Metal-insulator-semiconductor (MOS) capacitor is a key structure for high performance MOS field transistors (MOSFETs), requiring low leakage current, high breakdown voltage, and low interface states. In this paper, -GaO MOS capacitors were fabricated with ALD deposited AlO using HO or ozone (O) as precursors. Compared with the AlO gate dielectric with HO as ALD precursor, the leakage current for the O precursor case is decreased by two orders of magnitude, while it keeps the same level at the fixed charges, interface state density, and border traps. The SIMS tests show that AlO with O as precursor contains more carbon impurities. The current transport mechanism analysis suggests that the C-H complex in AlO with O precursor serves as deep energy trap to reduce the leakage current. These results indicate that the AlO-GaO MOS capacitor using the O precursor has a low leakage current and holds potential for application in -GaO MOSFETs.
Fund: Project supported in part by the Science and Technology Development Plan Project of Jilin Province, China (Grant No. YDZJ202303CGZH022), the National Key Research and Development Program of China (Grant No. 2024YFE0205300), the National Natural Science Foundation of China (Grant No. 62471504), and the Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University) (Grant No. OEMT-2023- KF-05).
Zheng-Yi Liao(廖正一), Pai-Wen Fang(方湃文), Xing Lu(卢星), Gang Wang(王钢), and Yan-Li Pei(裴艳丽) Low leakage current β-Ga2O3 MOS capacitors with ALD deposited Al2O3 gate dielectric using ozone as precursor 2025 Chin. Phys. B 34 067304
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