1 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China; 2 University of Chinese Academy of Sciences, Beijing 100049, China; 3 China Science Photon Chip (Haining) Technology Co., Ltd., Haining 314499, China; 4 Beijing YanDong MicroElectronic Technology Co., Ltd., Beijing 100006, China
Abstract Silicon nitride (SiN) photonic platform has recently attracted increasing attention for SiN photonic integrated circuits . A diffraction grating with the only etched top-layer in tri-layer SiN optical waveguides is proposed, which shows a simple fabrication process, high upward diffraction efficiency, and lower far-field divergence angle. The measured results of the diffraction grating at a wavelength of 905 nm show the average upward diffraction efficiency of 90.5% and average far-field divergence angle of 0.154, which shows a good agreement with the design results with the upward diffraction efficiency of 91.6% and far-field divergence angle of 0.105.
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB2802401) and the Beijing Municipal Natural Science Foundation (Grant No. Z221100006722002).
Corresponding Authors:
Jingwei Liu, Zhengsheng Han
E-mail: liujingwei@cspctech.com;zshan@ime.ac.cn
Cite this article:
Zhaozhen Chen(陈兆震), Wenling Li(李文玲), Qian Wang(王乾), Enfeng Liu(刘恩峰), Xinqun Zhang(张新群), Jingwei Liu(刘敬伟), and Zhengsheng Han(韩郑生) Experimental demonstration of silicon nitride waveguide gratings with excellent efficiency and divergence angle 2025 Chin. Phys. B 34 054206
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