An injection-locking diode laser at 671 nm with a wide tuning range up to 6 GHz
Hong-Fang Song(宋红芳)1,2, Yue Shen(沈玥)1, and Ke Li(李可)1,2,†
1 School of Science, Huzhou University, Huzhou 313000, China; 2 Strong-coupling Physics International Research Laboratory, Huzhou University, Huzhou 313000, China
Abstract We present a compact injection-locking diode laser module to generate 671 nm laser light with a high output power up to 150 mW. The module adopts a master-slave injection-locking scheme, and the injection-locking state is monitored using the transmission spectrum from a Fabry-Pérot interferometer. Beat frequency spectrum measurement shows that the injection-locked slave laser has no other frequency components within the 150-MHz detection bandwidth. It is found that without additional electronic feedback, the slave laser can follow the master laser over a wide range of 6 GHz. All the elements of the module are commercially available, which favors fast construction of a complete 671-nm laser system for the preparation of cold 6Li atoms with only one research-grade diode laser as the seeding source.
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12035006, 12205095, and 12147219) and the Natural Science Foundation of Zhejiang Province (Grant No. LQ21A040001).
Corresponding Authors:
Ke Li
E-mail: 02539@zjhu.edu.cn
Cite this article:
Hong-Fang Song(宋红芳), Yue Shen(沈玥), and Ke Li(李可) An injection-locking diode laser at 671 nm with a wide tuning range up to 6 GHz 2023 Chin. Phys. B 32 094205
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