Interfaces between MoOx and MoX2 (X = S, Se, and Te)

doi:10.1088/1674-1056/abb310

Abstract

In the past decades there have been many breakthroughs in low-dimensional materials, especially in two-dimensional (2D) atomically thin crystals like graphene. As structural analogues of graphene but with a sizeable band gap, monolayers of atomically thin transition metal dichalcogenides (with formula of MX₂, M = Mo, W; X = S, Se, Te, etc.) have emerged as the ideal 2D prototypes for exploring fundamentals in physics such as valleytronics due to the quantum confinement effects, and for engineering a wide range of nanoelectronic, optoelectronic, and photocatalytic applications. Transition metal trioxides as promising materials with low evaporation temperature, high work function, and inertness to air have been widely used in the fabrication and modification of MX₂. In this review, we reported the fabrications of one-dimensional MoS₂ wrapped MoO₂ single crystals with varied crystal direction via atmospheric pressure chemical vapor deposition method and of 2D MoO_x covered MoX₂ by means of exposing MoX₂ to ultraviolet ozone. The prototype devices show good performances. The approaches are common to other transition metal dichalcogenides and transition metal oxides.

Keywords: MoO_x epitaxial relationships MoX₂ layer-by-layer oxidation

Received: 08 July 2020
Revised: 10 August 2020
Accepted manuscript online: 27 August 2020

Fund: the National Natural Science Foundation of China (Grant No. 11874427), the National Science Foundation DMR-1903962, and the Fundamental Research Funds for the Central Universities of Central South University (Grant No. 2019zzts429).

Corresponding Authors: ^†Corresponding author. E-mail: physhh@csu.edu.cn

Cite this article:

Fengming Chen(陈凤鸣), Jinxin Liu(刘金鑫), Xiaoming Zheng(郑晓明), Longhui Liu(刘龙慧), Haipeng Xie(谢海鹏), Fei Song(宋飞), Yongli Gao(高永立), and Han Huang(黄寒) Interfaces between MoO_x and MoX₂ (X = S, Se, and Te) 2020 Chin. Phys. B 29 116802

Fig. 1.

Crystal structures of MoS₂ (a) and MoO₂ (b). (c) Schematic of transition between MoO_x and MoX₂.

Fig. 2.

Morphologies. Schematic description of the crystalline structure at the surfaces of (a) c-sapphire, (b) m-sapphire, and (c) a-sapphire. Al atoms and O atoms are represented by purple and red balls, respectively. The unit cells and lattice constants are marked. The representative OM images of nanorods on (d) c-sapphire, (e) m-sapphire, and (f) a-sapphire.^[80]

Fig. 3.

Compositions. (a) Typical Raman spectra of as-made c- and m-MoO₂@MoS₂ nanorods, nanorods, and MoS₂. (b) Raman map of m-nanorods at 207 cm⁻¹. Raman maps of c-nanorods at (c) 201 cm⁻¹ and (d) 400 cm⁻¹.^[79,80]

Fig. 4.

Global structural properties. (a) XRD patterns of c- (black) and m-nanorods (blue). (b) 2D-GIXRD pattern of c-nanorods.^[79]

Fig. 5.

Local structural properties. Cross-sectional SEM image of single (a) c-nanorod and (b) m-nanorod. (c) Low magnification image of c-nanorod. The insets show the HRTEM image in [201] zone and the corresponding SAED pattern. (d) Low-magnification TEM image of m-nanorod. Inset: SAED patterns of individual nanorod and enlarged high-resolution TEM image. The EDS pattern of the individual (e) c-nanorod and (f) m-nanorod.^[79,80]

Fig. 6.

Three-dimension growth models of (a) m-nanorod and (b) c-nanorod.^[80]

Fig. 7.

Electrical properties. (a) V₂₃–I₁₄ curve of individual c-nanorod. Inset: SEM image of the device. (b) I–V characteristics measured as a function of the ambient temperature. Inset: Resistance of the channel versus ambient temperature. (c) I₁₄ as a function of V₂₃. (d) I–V curve (solid black line) and conductivity curve (dotted blue line) of individual m-nanorod. Inset: The SEM image of the device.^[80,81]

Fig. 8.

MoS₂ nanoribbons by PMMA assisted decoupling. (a) Schematic diagram of the proposed transfer progress. (b) AFM topography of transferred MoS₂ flake and nanoribbon. Inset: Height profiles of line scans marked in (b). (c) PL spectra of the MoS₂ flake, MoO₂@MoS₂ nanorod, and transferred MoS₂ nanoribbon. (d) Schematic representation of the formation of MoS₂ nanoribbons on SiO₂/Si.^[82]

Fig. 9.

CVD grown MoS₂ nanoribbons without catalysts. (a) The Raman $E_{2 g}^{1}$ and (b) PL A intensity maps of MoS₂ nanoribbons. (c) Low magnification TEM image of transferred MoS₂ nanoribbons. (d) ADF-STEM image of MoS₂ nanoribbons in the [0001] zone.^[83]

Fig. 10.

Layer-by-layer oxidation of few-layer MoTe₂ using UVO. (a) Raman spectra (laser wavelength 532 nm) of tetralayer MoTe₂ upon intermittent UVO exposure from 0 to 50 min. The inset shows the intensity ratio of $B_{2 g}^{1} / E_{2 g}^{1}$ . (b) The corresponding Raman mapping of $B_{2 g}^{1}$ and $E_{2 g}^{1}$ modes. The scale bar is 5 μm. (c) Extracted parameters as a function of UVO treatment time: mobility μ (left axis) and hole concentration n_h (right axis) in logarithmic coordinates. (d) The corresponding band diagram.^[84,86]

Fig. 11.

(a)–(b) Extracted effective barrier height φ_B of pristine and UVO treatment MoTe₂ FETs as a function of V_g. Insets in panels (a) and (b): Energy band structures between metal contacts and MoTe₂ before and after MoO_x doping. E_F is the Fermi level energy. E_C and E_V represent the minimum energy of conduction band and the maximum energy of valance band, respectively. Φ_SB and W_SB are the Schottky barrier height and width, respectively. The Schottky barrier formed at metal/MoTe₂ interface is compressed for hole doped MoTe₂ device, facilitating the tunneling transport of hole.^[86]

Fig. 12.

Lateral MoSe₂ p–n junction. (a) The cross section schematic structure of the lateral p–n junction device. (b) The optical photograph of p–n device. (c) I_d–V_d curve of the MoSe₂ diode in linear (black line) and log (red) scale at V_g = 0 V. The inset shows the transfer characteristic I_d–V_g curve of the MoSe₂ diode at V_d = 1 V. (d) Dynamic optical response of the device (V_d = 0 V, V_g = 0 V) under illumination of light of 450 nm, 520 nm, 633 nm.^[85]

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