Energy storage performances regulated by BiMnO3 proportion in limited solid solution films
Fei Guo(郭飞), Zhifeng Shi(史智锋), Yaping Liu(刘亚平), and Shifeng Zhao(赵世峰)†
School of Physical Science and Technology, Inner Mongolia Key Laboratory of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot 010021, China
Na0.5Bi0.5TiO3–BiMnO3 (NBT–BM) limited solid solution films were fabricated to investigate the lattice modification on the energy storage performances. The introduction of the BM solute lattice induces the NBT solvent lattices undergoing the transition from the pure phase, solid solution, solubility limit to precipitation. Correspondingly, the polarization states transfer from the macroscopic ferroelectric domains to nanodomains then to compound ferroelectric domains. The introduction of BiMnO3 generates great lattice changes including the local lattice fluctuation and the large lattice stretching, which enhance the energy storage performances, with the energy storage efficiency being enhanced from 39.2% to 53.2% and 51.7% and the energy density being enhanced from 33.1 J/cm3 to 76.5 J/cm3 and 83.8 J/cm3 for the BM components of 2% and 4%, respectively. The lattice modifications play a key role in the energy storage performances for limited solid solution films, which provides an alternative strategy for energy storage material.
Received: 04 April 2020
Revised: 08 July 2020
Accepted manuscript online: 15 July 2020
Fund: the National Natural Science Foundation of China (Grant Nos. 11864028 and 11564028) and Inner Mongolia Science Foundation, China (Grant No. 2018MS01003).
Fei Guo(郭飞), Zhifeng Shi(史智锋), Yaping Liu(刘亚平), and Shifeng Zhao(赵世峰) Energy storage performances regulated by BiMnO3 proportion in limited solid solution films 2020 Chin. Phys. B 29 116801
Fig. 1.
(a) XRD patterns of NBT–BM limited solid solution films. (b) Enlarged XRD patterns. (c) Lattice parameters and the phase transition of limited solid solution. (d)–(g) HRTEM images of the (1 – x)NBT–xBM limited solid solution with x equaling to 0, 0.02, 0.04, and 0.06, respectively.
wRp
Rp
χ2
a = b = c/Å
Volume/Å3
NBT
8.3%
6.4%
1.204
3.8899
58.857
NBT–0.02BMO
8.9%
6.8%
1.291
3.9107
59.811
NBT–0.04BMO
7.4%
5.6%
1.251
3.9168
60.089
NBT–0.06BMO
8.2%
6.5%
1.463
3.9192
60.199
Table 1.
The refined XRD patterns of the NBT–BM limited solid solution.
Fig. 2.
AFM surface morphology of (1 – x)NBT–xBM limited solid solution: (a) x = 0, (b) x = 0.02, (c) x = 0.04, (d) x = 0.06.
Fig. 3.
(a)–(d) Temperature-dependent dielectric constants of the pure NBT, 0.98NBT–0.02BM, 0.96NBT–0.04BM, and 0.94NBT–0.06BM, respectively. (e) Dispersion coefficient γ of NBT–BM limited solid solution films.
Fig. 4.
(a) The P–E loops of the NBT–BM limited solid solution films at 1198 kV/cm. (b) The leakage current of the NBT–BM limited solid solution films. (c) Weibull distribution of breakdown strength for the NBT–BM limited solid solution films.
Fig. 5.
(a) The P–E loops of NBT–BM limited solid solution films near the breakdown electric field. (b) The energy density. (c) The efficiency of NBT–BM limited solid solution films.
Fig. 6.
The schematic diagram of polarization states modulated by the lattice engineering: (a), (e), (i), and (m) The crystal structure of the NBT, 0.98NBT–0.02BM solid solution, 0.94NBT–0.06BM at the solubility limit, and 0.94NBT–0.06BM with precipitations, respectively. (b), (f), (j), and (n) The lattices of the NBT, 0.98NBT–0.02BM solid solution, 0.96NBT–0.04BM, and 0.94NBT–0.06BM in two-dimensional {110} crystal plane, respectively. (c), (g), (k), and (o) The schematic diagram of charge displacement for the NBT, 0.98NBT–0.02BM solid solution, 0.96NBT–0.04BM, and 0.94NBT–0.06BM lattices at the Brillouin zone, respectively. (d), (h), (l), and (p). The domain structure diagram of the pure NBT, 0.98NBT–0.02BM solid solution, 0.96NBT–0.04BM, and 0.94NBT–0.06BM, respectively.
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