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Chin. Phys. B, 2012, Vol. 21(12): 126501    DOI: 10.1088/1674-1056/21/12/126501
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Enhancing the thermal conductivity of polymer-assisted deposited Al2O3 film by nitrogen doping

Huang Jiang (黄江), Zhang Yin (张胤), Pan Tai-Song (潘泰松), Zeng Bo (曾波), Hu Guo-Hua (胡国华), Lin Yuan (林媛)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 (AlON) thin films on Si(100) substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown films have been characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and 3-omega method, respectively. Amorphous and polycrystalline Al2O3 and AlON thin films have been formed at 700 ℃ and 1000 ℃. The thermal conductivity results indicated that the effect of nitrogen doping on the thermal conductivity is determined by the competition of the increase of Al–N bonding and the suppression of crystallinity. A 67% enhancement in thermal conductivity has been achieved for the samples grown at 700 ℃, demonstrating that the nitrogen doping is an effective way to improve the thermal performance of polymer-assisted-deposited Al2O3 thin films at a relatively low growth temperature.
Received:  04 August 2012      Revised:  10 September 2012      Accepted manuscript online: 
PACS:  65.60.+a (Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.)  
  65.40.–b  
  61.25.he (Polymer solutions)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976061 and 11028409).
Corresponding Authors:  Lin Yuan     E-mail:  linyuan@uestc.edu.cn

Cite this article: 

Huang Jiang (黄江), Zhang Yin (张胤), Pan Tai-Song (潘泰松), Zeng Bo (曾波), Hu Guo-Hua (胡国华), Lin Yuan (林媛) Enhancing the thermal conductivity of polymer-assisted deposited Al2O3 film by nitrogen doping 2012 Chin. Phys. B 21 126501

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