CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Formations and morphological stabilities of ultrathin CoSi2 films |
Zhu Zhi-Wei (朱志炜)a, Gao Xin-Dong (高歆栋)b, Zhang Zhi-Bin (张志滨)b, Piao Ying-Hua (朴颖华)a, Hu Cheng (胡成)a, Zhang David-Wei (张卫)a, Wu Dong-Ping (吴东平 )a |
a State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China; b Solid-State Electronics, the Ångström Laboratory, Uppsala University, Box 534, 75121 Uppsala, Sweden |
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Abstract In this paper we investigate the formations and morphological stabilities of Co-silicide films using 1-8-nm thick Co layers sputter-deposited on silicon (100) substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For Co layer with a thickness no larger than 1 nm, epitaxially aligned CoSi2 films readily grow on silicon (100) substrate and exhibit good morphological stabilities up to 600 ℃. For Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of Ni layer for epitaxial alignment of NiSi2 on silicon (100) substrate. The larger lattice mismatch between CoSi2 film and silicon substrate is the root cause for the smaller critical thickness of the Co layer.
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Received: 22 December 2011
Revised: 19 March 2012
Accepted manuscript online:
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PACS:
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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68.35.Dv
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(Composition, segregation; defects and impurities)
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85.40.Ls
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(Metallization, contacts, interconnects; device isolation)
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Fund: Project supported by the "China National Science and Technology Major Project 02" (Grant No. 2009ZX02035-003), the National Natural Science Foundation of China (Grant No. 61176090), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning. |
Corresponding Authors:
Wu Dong-Ping
E-mail: dongpingwu@fudan.edu.cn
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Cite this article:
Zhu Zhi-Wei (朱志炜), Gao Xin-Dong (高歆栋), Zhang Zhi-Bin (张志滨), Piao Ying-Hua (朴颖华), Hu Cheng (胡成), Zhang David-Wei (张卫), Wu Dong-Ping (吴东平 ) Formations and morphological stabilities of ultrathin CoSi2 films 2012 Chin. Phys. B 21 087304
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[1] |
An X, Fan C H, Huang R, Guo Y, Xu C and Zhang X 2009 Chin. Phys. B 18 4465
|
[2] |
Luo J, Qiu Z J, Zha C L, Zhang Z, Wu D, Lu J, Åerman J, Ötling M, Hultman L and Zhang S L 2010 Appl. Phys. Lett. 96 031911
|
[3] |
Zhang Z, Zhang S L, Yang B, Zhu Y, Rossnagel S M, Gaudet S, Kellock A J, Jordan-Sweet J and Lavoie C 2010 Appl. Phys. Lett. 96 071915
|
[4] |
Massalski T B 1986 Binary Alloy Phase Diagrams (Metal Park, Ohio: American Society for Metals)
|
[5] |
D'Heurle F M and Gas P 1986 J. Mater. Res. 1 205
|
[6] |
Lu J, Luo J, Zhang S L, Ötling M and Hultman L 2010 Electrochem. Solid-State Lett. 13 H360
|
[7] |
Wei C S, Fraser D B, Dass M L and Brat T 1990 VII International IEEE VLSI Multilevel Interconnection Conference June 12-13, Santa clara, USA, p. 233
|
[8] |
Gallego J M and Miranda R 1990 Surfance Science (Amsterdam: North Holland) p. 203
|
[9] |
Zhang S L and D'Heurle F M 1999 Proceedings of the 16th Course of the International School of Solid State Physics Erice, Italy, p. 349
|
[10] |
Hwang I Y, Kim J H, Oh S K, Kang H J and Lee Y S 2003 Surf. Interface Anal. 35 184
|
[11] |
Gao X, Andersson J, Kubart T, Nyberg T, Smith U, Lu J, Hultman L, Kellock A J, Zhang Z, Lavoie C and Zhang S L 2011 Electrochem. Solid-State Lett. 14 H268
|
[12] |
Keyser K, Bockstael C, Meirhaeghe R L, Detavernier C, Verleysen E, Bender H, Vandervorst W, Jordan-Sweet J and Lavoie C 2010 Appl. Phys. Lett. 96 173503
|
[13] |
Tung R T 1992 Mater. Chem. Phys. 32 107
|
[14] |
Smeets D, Vantomme A, Keyser K D, Detavernier C and Lavoie C 2008 J. Appl. Phys. 103 063506
|
[15] |
Zhang S L, Cardenas J, D'Heurle F M, Svensson B G and Petersson C S 1995 Appl. Phys. Lett. 66 58
|
[16] |
Li Q, Yu Y H, Bhatia C S, Marks L D, Lee S C and Chung Y W 2000 J. Vac. Sci. Technol. A 18 2333
|
[17] |
Zhao J, Ballast L K, Hossain T Z, Trostel R E and Bridgman W C 2000 J. Vac. Sci. Technol. A 18 1690
|
[18] |
Lee P S, Mangelinck D, Pey K L, Shen Z X, Ding J, Osipowicz T and See A 2000 Electrochem. Solid State Lett. 3 153
|
[19] |
Deboer F R, Boom R, Mattens W C, Miedema A R and Niessen A K 1988 Cohesion in Metals: Transition Metal Alloys (Amsterdam: North Holland) p. 274
|
[20] |
Tu K N, Chu W K and Mayer J 1975 Thin Solid Films 25 403
|
[21] |
D'Heurle F M 1988 J. Mater. Res. 3 167
|
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