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Chin. Phys. B, 2011, Vol. 20(3): 038101    DOI: 10.1088/1674-1056/20/3/038101
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering

Wang Tao(王涛), Jiang Ya-Dong(蒋亚东), Yu He(于贺), Wu Zhi-Ming(吴志明), and Zhao He-Nan(赵赫男)
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  This paper simulates reactive magnetron-sputtering in constant current mode in a Vanadium-O2/Ar system equipped with a DC power supply by adopting both kinetics model and Berg's model. The target voltage during the reactive sputtering has been investigated as a function of reactive gas flow. Both experiments and simulations demonstrate a hysteresis curve with respect to the oxygen supply. The time-dependent variation of the target mode is studied by measuring the target voltage for various reactive oxygen gas flows and pre-sputtering times. The pre-sputtering time increases with the increased initial target voltage. Furthermore, a corresponding time-dependent model simulating target voltage changes is also proposed. Based on these simulations, we find some relationships between the discharge voltage behaviour and the properties of the formed oxide. In this way, a better understanding of the target voltage changes during reactive sputtering can be achieved. We conclude that the presented theoretical models for parameter-dependent case and time-dependent case are in qualitative agreement with the experimental results and can be used to comprehend the target voltage behaviour in the deposition of vanadium oxide thin films.
Keywords:  Berg's model      time dependence      target voltage      vanadium oxide  
Revised:  20 October 2010      Accepted manuscript online: 
PACS:  81.15.Cd (Deposition by sputtering)  
  81.15.Ef  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60806021).

Cite this article: 

Wang Tao(王涛), Jiang Ya-Dong(蒋亚东), Yu He(于贺), Wu Zhi-Ming(吴志明), and Zhao He-Nan(赵赫男) Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering 2011 Chin. Phys. B 20 038101

[1] Wei X J, Liang C J, Guang K P, L De Hua, Nie Y X, Zhu S Q, Huang F, Zhang W W and Zheng W 2008 Chin. Phys. B 17 3512
[2] Wei X J and Nie Y X 2002 Chin. Phys. 11 737
[3] Berg S and Nyberg T 2005 Thin Solid Films 476 215
[4] Jonsson L B, Nyberg T and Berg S 2000 J. Vac. Sci. Technol. 18 503
[5] Depla D, Chen Z Y, Bogaerts A and Lgnatova V 2004 J. Vac. Sci. Technol. A 22 1524
[6] Depla D, Heirwegh S, Mahieu S, Haemers J and Gryse R D 2007 J. Appl. Phys. 101 013301
[7] Depla D, Heirwegh S, Mahieu S and Gryse R D 2007 J. Phys. D: Appl. Phys. 40 1957
[8] Kubart T, Depla D, D. Martin M, Nyberg T and Berg S 2008 Appl. Phys. Lett. 92 221501
[9] Kubart T, Jensen J, Nyberg T, Lijeholm L, Depla D and Berg S 2009 Vacuum 83 1295
[10] Kubart T, Trinh D H, Lijeholm L, Hultman L and Berg S 2008 J. Vac. Sci. Technol. A 26 565.
[11] Kubart T, Kappertz O, Nyberg T and Berg S 2006 Thin Solid Films 515 421
[12] Kusano E and Goulart D M 1990 Thin Solid Films 84 193
[13] Kusano E and Kinbara A 2000 J. Appl. Phys. 87 2015
[14] Zhu S L, Wang F H and Wu W T 1998 J. Appl. Phys. 84 6399.
[15] Pflug A, Szyszka B and Sittinger V 2003 Proceedings of 46h Annual Technical Conference of the Society of Vacuum Coaters (Albuquerque: SVC) p241
[16] Danisman K, Danisman S and Savas S 2009 Vacuum 204 610 endfootnotesize
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