Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

doi:10.1088/1674-1056/20/3/038102

Abstract We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

Keywords: chemical mechanical polishing ceria oxide over nitride selectivity origin

Received: 06 July 2010
Revised: 01 December 2010
Accepted manuscript online:

PACS:

81.65.Ps

(Polishing, grinding, surface finishing)

Fund: Project supported by the Center for Advanced Materials Processing (CAMP) at Clarkson University, the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-3), the National Basic Research Program of China (Grant Nos. 2007CB935400, 2010CB934300 and 2006CB302700), the National High Technology Development Program of China (Grant No. 2008AA031402), the Science and Technology Council of Shanghai, China (Grant Nos. 08DZ2200700, 08JC1421700 and 09QH1402600), and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists.

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Wang Liang-Yong(王良咏), Liu Bo(刘波), Song Zhi-Tang(宋志棠), Liu Wei-Li(刘卫丽), Feng Song-Lin(封松林), David Huang(黄丕成), and S.V Babu Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid 2011 Chin. Phys. B 20 038102

[1]	Krishnan M, Nalaskowski J W and Cook L M 2010 Chem. Rev. 110 178
[2]	Abiade J T, Yeruva S, Choi W, Moudgil B M, Kumar D and Singh R K 2006 J. Electrochem. Soc. 153 G1001
[3]	Cook L M 1990 J. Non-Cryst. Solids. 120 152
[4]	Kelsall A 1998 Glass Technology 39 6
[5]	Dandu P R V, Devarapalli V K and Babu S V 2001 J. Colloid Interface Sci. 347 267
[6]	Hoshino T, Kurata Y, Terasaki Y and Susa K 2001 J. Non-Cryst. Solids. 283 129
[7]	Hu Y Z, Gutman R J and Chow T P 1998 J. Electrochem. Soc. 145 3919
[8]	Carter P W and Johns T P 2005 Electrochem. Solid-State Lett. 8 G218
[9]	America W G and Babu S V 2004 Electrochem. Solid-State Lett. 7 G327
[10]	Kim S, So J H, Lee D J and Yang S M 2008 J. Colloid Interface Sci. 319 48
[11]	Lin M M, Duan W S and Chen J M 2010 Chin. Phys. B 19 0262011
[12]	Xiong Y, Zhang X J, Zhang X H and Wen S Z 2009 Acta. Phys. Sin. 58 1826 (in Chinese)
[13]	Kang H G, Lee M Y, Park H S, Paik U and Park J G 2005 Jpn. J. Appl. Phys. 44 4752
[14]	Badri A, Binet C and Lavalley J C 1996 J. Chem. Soc. Faraday Trans. 92 4669
[15]	Dos Santos M L, Lima R C, Riccardi C S, Tranquilin R L, Bueno P R, Varela J A and Longo E 2008 Mater. Lett. 62 4509
[16]	Bergstrom L and Bostedt E 1990 Colloids. Surf. 49 183 endfootnotesize

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Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

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