Antiresonance induced spin-polarized current generation

doi:10.1088/1674-1056/20/12/127201

Abstract According to the one-dimensional antiresonance effect (Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402), we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today's technology.

Keywords: antiresonance spin-polarized current impurity

Received: 17 May 2011
Revised: 21 May 2011
Accepted manuscript online:

PACS:	72.25.-b	(Spin polarized transport)
	73.63.-0b
	73.23.Hk	(Coulomb blockade; single-electron tunneling)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10904082 and 10875072).

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Yin Sun(尹笋), Min Wen-Jing(闵文静), Gao Kun(高琨) Xie Shi-Jie(解士杰), and Liu De-Sheng(刘德胜) Antiresonance induced spin-polarized current generation 2011 Chin. Phys. B 20 127201

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