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The hysteresis loops of a ferroelectric bilayer film with surface transition layers |
Cui Lian(崔莲)a), Lü Tian-Quan(吕天全)a)†, Sun Pu-Nan(孙普男)b), and Xue Hui-Jie(薛惠杰)a) |
a Center of Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin 150001, China; b Department of Physics, Heilongjiang University, Harbin 150080, China |
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Abstract Based on the transverse Ising model in the framework of the mean field approximation, this paper discusses a ferroelectric bilayer film with the surface transition layers within each constituent slab and an antiferroelectric interfacial coupling between two slabs. The hysteresis loop of a bilayer film is investigated. The results show that the surface transition layer in a ferroelectric bilayer film plays a significant role in realizing the multiple-state memory.
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Received: 30 November 2009
Accepted manuscript online:
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Cite this article:
Cui Lian(崔莲), Lü Tian-Quan(吕天全), Sun Pu-Nan(孙普男), and Xue Hui-Jie(薛惠杰) The hysteresis loops of a ferroelectric bilayer film with surface transition layers 2010 Chin. Phys. B 19 077701
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