Field emission of carbon nanotube array with normal-gate cold cathode
Dai Jian-Feng(戴剑锋)a)b)†, Mu Xiao-Wen(慕晓文)b), Qiao Xian-Wu(乔宪武)b), Chen Xiao-Xing(陈小婷)b), and Wang Jun-Hong(王军红)b)
a State Key Laboratory of Gansu Advanced Non-Ferrous Metal Materials, Lanzhou University of Technology, Lanzhou 730050, China; b School of Science, Lanzhou University of Technology, Lanzhou 730050, China
Abstract A hexagon pitch carbon nanotube (CNT) array vertical to the normal gate of cold cathode field emission displayer (FED) is simulated by solving the Laplace equation. The calculated results show that the normal gate causes the electric field around the CNT tops to be concentrated and emission electron beam become a column. The field enhancement factor and the emission current intensity step up greatly compared with those of diode structure. Emission current density increases rapidly with the decrease of normal-gate aperture. The gate voltage exerts a critical influence on the emission current.
Fund: Project supported by the National
Natural Science Foundation of China (Grant No.~50873047), and the
Foundation of Gansu Provincial Education Department, China (Grant
No.~0603-02).
Cite this article:
Dai Jian-Feng(戴剑锋), Mu Xiao-Wen(慕晓文), Qiao Xian-Wu(乔宪武), Chen Xiao-Xing(陈小婷), and Wang Jun-Hong(王军红) Field emission of carbon nanotube array with normal-gate cold cathode 2010 Chin. Phys. B 19 057201
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