Please wait a minute...
Chin. Phys. B, 2008, Vol. 17(8): 3003-3007    DOI: 10.1088/1674-1056/17/8/040
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Compositional and structural evolution of the titanium dioxide formation by thermal oxidation

Su Wei-Feng(苏卫锋)a), Gnaser Hubert b)c), Fan Yong-Liang(樊永良)a), Jiang Zui-Min(蒋最敏)a), and Le Yong-Kang(乐永康)a)c)†
a Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China; b Department of Physics, University of Kaiserslautern, D-67663 Kaiserslautern, Germany; c IFOS, University of Kaiserslautern, D-67663 Kaiserslautern, Germany
Abstract  Titanium oxide films were prepared by annealing DC magnetron sputtered titanium films in an oxygen ambient. X-ray diffraction (XRD), Auger electron spectroscopy (AES) sputter profiling, MCs$^{ + }$-mode secondary ion mass spectrometry (MCs$^{ + }$-SIMS) and atomic force microscopy (AFM) were employed, respectively, for the structural, compositional and morphological characterization of the obtained films. For temperatures below 875 K, titanium films could not be fully oxidized within one hour. Above that temperature, the completely oxidized films were found to be rutile in structure. Detailed studies on the oxidation process at 925 K were carried out for the understanding of the underlying mechanism of titanium dioxide (TiO$_{2})$ formation by thermal oxidation. It was demonstrated that the formation of crystalline TiO$_{2}$ could be divided into a short oxidation stage, followed by crystal forming stage. Relevance of this recognition was further discussed.
Keywords:  thermal oxidation      titanium oxide      compositional and structural evolution  
Received:  20 November 2007      Revised:  21 December 2007      Accepted manuscript online: 
PACS:  68.55.-a (Thin film structure and morphology)  
  61.05.cp (X-ray diffraction)  
  68.37.Ps (Atomic force microscopy (AFM))  
  79.20.Fv (Electron impact: Auger emission)  
  81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)  

Cite this article: 

Su Wei-Feng(苏卫锋), Gnaser Hubert , Fan Yong-Liang(樊永良), Jiang Zui-Min(蒋最敏), and Le Yong-Kang(乐永康) Compositional and structural evolution of the titanium dioxide formation by thermal oxidation 2008 Chin. Phys. B 17 3003

[1] Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique
Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[2] Anti-oxidation characteristics of Cr-coating on surface of Ti-45Al-8.5Nb alloy by plasma surface metallurgy technique
Bing Zhou(周兵), Ya-Rong Wang(王亚榕), Ke Zheng(郑可), Yong Ma(马永), Yong-Sheng Wang(王永胜), Sheng-Wang Yu(于盛旺), and Yu-Cheng Wu(吴玉程). Chin. Phys. B, 2020, 29(12): 126101.
[3] Synthesis and characterization of β-Ga2O3@GaN nanowires
Shuang Wang(王爽), Yue-Wen Li(李悦文), Xiang-Qian Xiu(修向前), Li-Ying Zhang(张丽颖), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Bin Liu(刘斌), Peng Chen(陈鹏), Rong Zhang(张荣), You-Dou Zheng(郑有炓). Chin. Phys. B, 2019, 28(2): 028104.
[4] The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors
Bing-Sheng Li(李炳生), Zhi-Yan Xiao(肖芝燕), Jian-Gang Ma(马剑刚), Yi-Chun Liu(刘益春). Chin. Phys. B, 2017, 26(11): 117101.
[5] Retarded thermal oxidation of strained Si substrate
Sun Jia-Bao (孙家宝), Tang Xiao-Yu (唐晓雨), Yang Zhou-Wei (杨周伟), Shi Yi (施毅), Zhao Yi (赵毅). Chin. Phys. B, 2014, 23(6): 066103.
[6] Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier
Tian Xiao-Bo (田晓波), Xu Hui (徐晖). Chin. Phys. B, 2014, 23(6): 068401.
[7] Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge
Han Le (韩乐), Wang Sheng-Kai (王盛凯), Zhang Xiong (张雄), Xue Bai-Qing (薛百清), Wu Wang-Ran (吴汪然), Zhao Yi (赵毅), Liu Hong-Gang (刘洪刚). Chin. Phys. B, 2014, 23(4): 046804.
[8] Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures
Lin Fang (林芳), Shen Bo (沈波), Lu Li-Wu (卢励吾), Xu Fu-Jun (许福军), Liu Xin-Yu (刘新宇), Wei Ke (魏珂). Chin. Phys. B, 2014, 23(3): 037303.
[9] EFFECT OF ZnFe22O4 DOPING ON THE OPTICAL PROPERTIES OF TiO2 THIN FILMS
Li Guang-hai (李广海), Wu Yu-cheng (吴玉程), Zhang Li-de (张立德). Chin. Phys. B, 2001, 10(2): 148-151.
No Suggested Reading articles found!