Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

doi:10.1088/1674-1056/23/6/068401

Abstract The recent published experimental data of titanium oxide memristor devices which are tested under the same experimental conditions exhibit the strange instability and complexity of these devices. Such undesired characteristics preclude the understanding of the device conductive processes and the memristor-based practical applications. The possibility of the coexistence of dopant drift and tunnel barrier conduction in a memristor provides preliminary explanations for the undesired characteristics. However, current research lacks detailed discussion about the coexistence case. In this paper, dopant drift and tunnel barrier-based theories are first analyzed for studying the relations between parameters and physical variables which affect characteristics of memristors, and then the influences of each parameter change on the conductive behaviors in the single and coexistence cases of the two mechanisms are simulated and discussed respectively. The simulation results provide further explanations of the complex device conduction. Theoretical methods of eliminating or reducing the coexistence of the two mechanisms are proposed, in order to increase the stability of the device conduction. This work also provides the support for optimizing the fabrications of memristor devices with excellent performance.

Keywords: titanium oxide memristor simulation program with integrated circuit emphasis dopant drift tunnel barrier

Received: 19 October 2013
Revised: 18 December 2013
Accepted manuscript online:

PACS:	84.32.-y	(Passive circuit components)
	85.35.-p	(Nanoelectronic devices)
	61.46.-w	(Structure of nanoscale materials)
	85.40.Bh	(Computer-aided design of microcircuits; layout and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61171017).

Corresponding Authors: Tian Xiao-Bo
E-mail: txiaobo1985@gmail.com

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Tian Xiao-Bo (田晓波), Xu Hui (徐晖) Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier 2014 Chin. Phys. B 23 068401

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[1]	The design and simulation of a titanium oxide memristor-based programmable analog filter in a simulation program with integrated circuit emphasis Tian Xiao-Bo (田晓波), Xu Hui (徐晖). Chin. Phys. B, 2013, 22(8): 088501.
[2]	The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier Tian Xiao-Bo (田晓波), Xu Hui (徐晖), Li Qing-Jiang (李清江). Chin. Phys. B, 2013, 22(8): 088502.
[3]	The influences of model parameters on the characteristics of memristors Zhou Jing(周静) and Huang Da(黄达) . Chin. Phys. B, 2012, 21(4): 048401.

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Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

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