Abstract A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.
Received: 04 July 2005
Revised: 28 September 2005
Accepted manuscript online:
PACS:
85.30.De
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the SpecialFoundation for State Major Basic Research Program of China (Grant NoG2000035602) and the\linebreak\makebox[1.6mm]{}National Natural Science Foundation of China (GrantNo 90307006).
Cite this article:
Du Gang (杜刚), Liu Xiao-Yan (刘晓彦), Han Ru-Qi (韩汝琦) Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation 2006 Chinese Physics 15 177
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