Abstract An array of random-oriented zinc oxide nanowires (ZnO NWs) was fabricated on silicon substrate by thermal evaporation. After a thermal evaporation process, the silicon substrate was covered with a large number of uniformly distributed ZnO islands, from which non-aligned NWs with a diameter of several ten nanometres were grown. During this process, the temperature around the substrate was intentionally kept below 500$^\circ$C for practical consideration. From these ZnO NWs field emission was achieved. The turn-on field, under which a 10$\mu $A/cm$^{2}$ current density was extracted, was measured to be 3.0V/$\mu$m. Also, the emission site distribution was investigated using the transparent anode technique. The field emission was observed to have occurred from the whole sample surface. These results suggest that ZnO NWs have great potential application in flat panel displays.
Received: 14 April 2004
Revised: 16 June 2004
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 60128101,
50202002 and 60171025), the Natural Science Foundation of Beijing, China (Grant No 4032012), and the State Key Development Programme for Basic Research of China (G
Cite this article:
Chen Liang (陈亮), Zhang Geng-Min (张耿民), Wang Ming-Sheng (王鸣生), Zhang Qi-Feng (张琦锋) Field emission from zinc oxide nanowires 2005 Chinese Physics 14 181
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