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Acta Physica Sinica (Overseas Edition), 1996, Vol. 5(4): 295-299    DOI: 10.1088/1004-423X/5/4/006
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

BROADENING OF RESISTIVE TRANSITION AND IRREVERSIBILITY LINE FOR EPITAXIAL YBa2Cu3O7-$\delta$ THIN FILM

XU XIAO-JUN (许小军)a, LI KE-BIN (李可斌)b, FANG JUN (方军)a, WANG ZHI-HE (王智河)a, CAO XIAO-WEN (曹效文)a
a Institute of Plasma Physics, Academia Sinica, Hefei 230031, China; b Institute of Solid State Physics, Academia Sinica, Hefei 230031, China
Abstract  The broadening of resistive transition of c axis oriented epitaxial YBCO thin film has been measured for three configurations: (1) Hc and HI; (2) Hab plane and HI; (3) Hab plane and HI in magnetic field up to 8 Teala(T), and for different angle $\theta$ of magnetic field relative to the ab plane with H = 4T. The results obtained indicate that the broadening of resistive transition is mainly determined by the angle $\theta$, but is hardly related to the angle $\alpha$ made between magnetic field and tran sport current in ab plane. This means that the broadening of resistive transition is not determined by flux motion drived by apparent Lorentz force. Au expression of angular dependence of irreveraibility line has been given.
Received:  07 February 1995      Accepted manuscript online: 
PACS:  74.78.Bz  
  74.25.Fy  
  74.25.Op (Mixed states, critical fields, and surface sheaths)  
Fund: Project supported by the National Center for Research and Development for Superconductivity of China under No.J-A-5226.

Cite this article: 

XU XIAO-JUN (许小军), LI KE-BIN (李可斌), FANG JUN (方军), WANG ZHI-HE (王智河), CAO XIAO-WEN (曹效文) BROADENING OF RESISTIVE TRANSITION AND IRREVERSIBILITY LINE FOR EPITAXIAL YBa2Cu3O7-$\delta$ THIN FILM 1996 Acta Physica Sinica (Overseas Edition) 5 295

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