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Special Issue:
SPECIAL TOPIC — States and new effects in nonequilibrium
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| SPECIAL TOPIC—States and new effects in nonequilibrium |
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Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy |
| Panpan Huang(黄盼盼)1, Youlu Zhang(张有禄)2, Kai Hu(胡凯)1, Jingbo Qi(齐静波)2,3,†, Dainan Zhang(张岱南)1,2,‡, and Liang Cheng(程亮)2,3,§ |
1 School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China;
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China;
3 School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China |
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Abstract We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers. The experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm, and its pump-induced photoconductivity can be explained by the Drude—Smith model. The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture. The first- and second-order recombination rates are obtained by the rate equation fitting, which are (2.6±1.1)×10-2 ps-1 and (6.6±1.8)×10-19 cm3·ps-1, respectively. Meanwhile, we also obtain the diffusion length of photo-generated carriers in GeSn, which is about 0.4 μm, and it changes with the pump delay time. These results are important for the GeSn-based infrared optoelectronic devices, and demonstrate that GeSn materials can be applied to high-speed optoelectronic detectors and other applications.
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Received: 09 March 2023
Revised: 11 April 2023
Accepted manuscript online: 24 April 2023
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PACS:
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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71.20.Nr
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(Semiconductor compounds)
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72.15.Lh
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(Relaxation times and mean free paths)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12004067, 11974070, 62027807, and 52272137) and the National Key R&D Program of China (Grant No. 2022YFA1403000). |
Corresponding Authors:
Jingbo Qi, Dainan Zhang, Liang Cheng
E-mail: jbqi@uestc.edu.cn;dnzhang@uestc.edu.cn;chengliang@uestc.edu.cn
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Cite this article:
Panpan Huang(黄盼盼), Youlu Zhang(张有禄), Kai Hu(胡凯), Jingbo Qi(齐静波), Dainan Zhang(张岱南), and Liang Cheng(程亮) Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy 2024 Chin. Phys. B 33 017201
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