Back interface passivation for ultrathin Cu(In,Ga)Se2 solar cells with Schottky back contact: A trade-off of electrical effects
Ye Tu(涂野)1, Yong Li(李勇)2, and Guanchao Yin(殷官超)1,†
1 School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China; 2 Faculty of Physics, University of Duisburg-Essen and CENIDE, Forsthausweg 2, D-47057 Duisburg, Germany
Abstract Back interface passivation reduces the back recombination of photogenerated electrons, whereas aggravates the blocking of hole transport towards back contact, which complicate the back interface engineering for ultrathin CIGSe solar cells with a Schottky back contact. In this work, theoretical explorations were conducted to study how the two contradictory electrical effects impact cell performance. For ultrathin CIGSe solar cells with a pronounced Schottky potential barrier (Eh> 0.2 eV), back interface passivation produces diverse performance evolution trends, which are highly dependent on cell structures and properties. Since a back Ga grading can screen the effect of reduced recombination of photogenerated electrons from back interface passivation, the hole blocking effect predominates and back interface passivation is not desirable. However, when the back Schottky diode merges with the main pn junction due to a reduced absorber thickness, the back potential barrier and the hole blocking effect is much reduced on this occasion. Consequently, cells exhibit the same efficiency evolution trend as ones with an Ohmic contact, where back interface passivation is always advantageous. The discoveries imply the complexity of back interface passivation and provide guidance to manipulate back interface for ultrathin CIGSe solar on TCOs with a pronounced Schottky back contact.
Ye Tu(涂野), Yong Li(李勇), and Guanchao Yin(殷官超) Back interface passivation for ultrathin Cu(In,Ga)Se2 solar cells with Schottky back contact: A trade-off of electrical effects 2023 Chin. Phys. B 32 068101
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