Impact of annealing temperature on the ferroelectric properties of W/Hf0.5Zr0.5O2/W capacitor

doi:10.1088/1674-1056/aca9c6

Abstract Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO₂-based ferroelectric thin films. Here, we systematically investigate the impact of the annealing process, with temperature varied from 350 ℃ to 550 ℃, on the electricity, ferroelectricity and reliability of a Hf_0.5Zr_0.5O₂ (HZO; 7.5 nm) film capacitor. It was found that HZO film annealed at a low temperature of 400 ℃ can effectively suppress the formation of the monoclinic phase and reduce the leakage current. HZO film annealed at 400 ℃ also exhibits better ferroelectric properties than those annealed at 350 ℃ and 550 ℃. Specifically, the 400 ℃-annealed HZO film shows an outstanding 2P_r value of 54.6 upmu C·cm^-2 at ±3.0 MV·cm^-1, which is relatively high compared with previously reported values for HZO film under the same electric field and annealing temperature. When the applied electric field increases to ±5.0 MV·cm^-1, the 2P_r value can reach a maximum of 69.6 upmu C·cm^-2. In addition, the HZO films annealed at 400 ℃ and 550 ℃ can endure up to bout 2.3×10⁸ cycles under a cycling field of 2.0 MV·cm^-1 before the occurrence of breakdown. In the 400 ℃-annealed HZO film, 72.1% of the initial polarization is maintained while only 44.9% is maintained in the 550 ℃-annealed HZO film. Our work demonstrates that HZO film with a low crystallization temperature (400 ℃) has quite a high ferroelectric polarization, which is of significant importance in applications in ferroelectric memory and negative capacitance transistors.

Keywords: Hf_0.5Zr_0.5O₂ thin film annealing temperature ferroelectric polarization endurance

Received: 30 August 2022
Revised: 23 November 2022
Accepted manuscript online: 08 December 2022

PACS:	77.84.-s	(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
	85.50.Gk	(Non-volatile ferroelectric memories)
	77.55.D-
	77.55.fp	(Other ferroelectric films)

Fund: Project supported by Hainan Provincial Natural Science Foundation of China (Grant No. 523QN257), Collegelevel Scientific Research Foundation of Qiongtai Normal University (Grant No. qtqn202215), the Innovation and Entrepreneurship Training Program for College Students (Grant No. 202213811016), Science and Technology Program of Henan (Grant No. 232102210182), Scientific Research Foundation of Henan Normal University (Grant No. 20230196), Natural Science Foundation of Shandong Province (Grant No. ZR2023QA047), Foundation of PeiXin (Grant No. 2023PX027), Science and technology smes innovation ability improvement project (Grant No. 2023TSGC0154), and the National Natural Science Foundation of China (Grant No. 62174059).

Corresponding Authors: Yan Zhang, Xubing Lu
E-mail: 1053527200@qq.com;luxubing@m.scnu.edu.cn

Cite this article:

Dao Wang(王岛), Yan Zhang(张岩), Yongbin Guo(郭永斌), Zhenzhen Shang(尚真真), Fangjian Fu(符方健), and Xubing Lu(陆旭兵) Impact of annealing temperature on the ferroelectric properties of W/Hf_0.5Zr_0.5O₂/W capacitor 2023 Chin. Phys. B 32 097701

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Impact of annealing temperature on the ferroelectric properties of W/Hf0.5Zr0.5O2/W capacitor

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Impact of annealing temperature on the ferroelectric properties of W/Hf_0.5Zr_0.5O₂/W capacitor