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Chin. Phys. B, 2018, Vol. 27(6): 067502    DOI: 10.1088/1674-1056/27/6/067502
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Voltage control of magnetization switching and dynamics

Hong-Yu Wen(文宏玉), Jian-Bai Xia(夏建白)
The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  The voltage controlled magnetic switching effect is verified experimentally. The Landau-Lifshitz-Gilbert (LLG) equation is used to study the voltage controlled magnetic switching. It is found that the initial values of magnetic moment components are critical for the switching effect, which should satisfy a definite condition. The external magnetic field which affects only the oscillation period should be comparable to the internal magnetic field. If the external magnetic field is too small, the switching effect will disappear. The precessions of mx and my are the best for the tilt angle of the external magnetic field θt=0°, i.e., the field is perpendicular to the sample plane.
Keywords:  magnetic switching      voltage control      spin transfer torque      Landau-Lifshitz-Gilbert (LLG) equation  
Received:  22 November 2017      Revised:  09 March 2018      Accepted manuscript online: 
PACS:  75.78.-n (Magnetization dynamics)  
  75.30.Gw (Magnetic anisotropy)  
  77.80.Fm (Switching phenomena)  
Fund: Project supported by the Advanced Research Plan of the Chinese Academy of Sciences (Grant No.QYZDY-SSW-JSC015).
Corresponding Authors:  Jian-Bai Xia     E-mail:  xiajb@semi.ac.cn

Cite this article: 

Hong-Yu Wen(文宏玉), Jian-Bai Xia(夏建白) Voltage control of magnetization switching and dynamics 2018 Chin. Phys. B 27 067502

[1] Kudo K, Suto H, Nagasawa T, Mizushima K and Sato R 2015 Appl. Phys. Express 8 103001
[2] Zhou W, Yamaji T, Seki T, Imamura H and Takanashi K 2017 Appl. Phys. Lett. 110 082401
[3] Taniguchi T 2014 Phys. Rev. B 90 024424
[4] Yamaji T and Imamura H 2016 Appl. Phys. Lett. 109 192403
[5] Wang Q C, Li X, Liang C Y, Barra A, Domann J, Lynch C, Sepulveda A and Carman G 2017 Appl. Phys. Lett. 110 102903
[6] Li Z D, He P B and Liu W M 2014 Chin. Phys. B 23 117502
[7] Peng Z L, Han X F, Zhao S F, Wei H X, Du G X and Zhan W S 2006 Acta Phys. Sin. 55 860 (in Chinese)
[8] Wang K L, Kou X, Upadhyaya P, Fan Y, Shao Q, Yu G and Amiri P K 2016 Proc. IEEE 104 1974
[9] Munira K, Pandey S C, Kula W and Sandhu G S 2016 J. Appl. Phys. 120 203902
[10] Ong P V, Kioussis N, Amiri P K and Wang K L 2016 Sci. Rep. 6 29815
[11] Ralph D C and Stiles M D 2008 J. Magn. Magn. Mater. 320 1190
[12] Brataas A, Kent A D and Ohno H 2012 Nat. Mater. 11 372
[13] Slonczewski J C 1996 J. Magn. Magn. Mater. 159 L1
[14] Berger L 1996 Phys. Rev. B 54 9353
[15] Wen Z, Sukegawa H, Seki T, Kubota T, Takanashi K and Mitani S 2017 Nat. Sci. Rep. 7 45026
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