Please wait a minute...
Chin. Phys. B, 2017, Vol. 26(9): 098901    DOI: 10.1088/1674-1056/26/9/098901
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement

Norazlina M S, Dheepan Chakravarthii M K, Shanmugan S, Mutharasu D, Shahrom Mahmud
School of Physics, Universiti Sains Malaysia 11800 Minden, Penang, Malaysia
Abstract  

Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor (MOSFET) is an important semiconductor device for light emitting diode-integrated circuit (LED IC) driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester (T3ster) at 2.0 A input current and ambient temperature varying from 25 ℃to 75 °C. The thermal parameters are measured for three proposed designs: FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance.

Keywords:  metal oxide field effect transistor (MOSFET)      thermal transient measurement      heat transfer path      FR4  
Received:  15 March 2017      Revised:  16 May 2017      Accepted manuscript online: 
PACS:  89.20.Bb (Industrial and technological research and development)  
  07.50.Ek (Circuits and circuit components)  
  44.10.+i (Heat conduction)  
  81.70.Pg (Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis)  
Fund: 

Project supported by the Collaborative Research in Engineering, Science & Technology (Grant No. P28C2-13).

Corresponding Authors:  Norazlina M S     E-mail:  ena_cr7@yahoo.com

Cite this article: 

Norazlina M S, Dheepan Chakravarthii M K, Shanmugan S, Mutharasu D, Shahrom Mahmud Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement 2017 Chin. Phys. B 26 098901

[1] Gina Roos, LED Drivers Intergrate MOSFETs, Circuit Protection to Reduce Design Complexity, Digi-Keys Electronics, 12. 03. 2013
[2] http://www.irf.com/packaging/_/N~1njcht#tab-tab3
[3] Jason Zhang 2004 Choosing the Right Power MOSFET Package, International Rectifier
[4] Weng C J 2009 Int. Com. Heat Mass Transfer 36 245
[5] Robert L 2009 Lifetime of White LEDs. U.S Department of Energy
[6] Krisnamoorthi S, Goh K Y, Chong D Y R, Kaapor R and Sun A Y S 2013 Proceedings of the 5th Electronics Packaging Technology Conference (EPTC 2003), 10-12 December, 2013, Pan Pacific Hotel, Singapore p. 485
[7] Law R C, Cheang R, Tan Y W and Azid I A 2007 International Electronic Manufacturing Technology 31rm st International Conference, 8-10 November, 2007, Putrajaya, Malaysia p. 50
[8] Application Note 2014 Thermal Considerations in Package Design and Selection, Integrated Device Technology, Inc.
[9] Shammas N Y A, Rodriguez M P and Masana F 2002 Microelectron Reliab. 42 109
[10] Blackburn D L 2004 Semiconductor Thermal Management and Management Symposium Twentieth Annual IEEE, 11 March, 2004, San Jose, CA, USA
[11] Katsis D C and Wyk J D V 2003 IEEE Transactions on Industry Applications 39 1239
[12] Farkas G and Simon G 2015 Microelectronics Journal 46 1185
[13] Lalith J, Tianmng D and Nadarajah N 2007 7rm th International Conference on Solid State Lighting, Proceedings of SPIE 6669: 666911, 26 August, 2007, CA, USA
[14] Andras V V, Zoltan S, Attila S and Marta R 2014 Electronic Packaging ICEP 2014 Proceedings 23-25 April, 2014, Toyama, Japan p. 591
[15] Zoltan S, Weikun H and Marta R 2006 Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2016 15th IEEE Intersociety Conference 31 May-3 June, 2016, Las Vegas NV, USA, p. 1572
[16] David Kennedy, What are the Functions of a Circuit Board
[17] Winco K C 2007 Journal of the HKPCA 24 12
[18] Horng R H, Hong J S, Tsai Y L, Wuu D S, Chen C M and Chen C J 2010 IEEE Trans. Electron Dev. 57 2203
[19] Coonrod J 2011 On Board Technology 26
[20] Cho S, Sundaram V, Tummala R R and Joshi Y K 2015 IEEE Trans. Components, Packaging and Manufacturing Technology 5 1075
[21] Eveliina J, Olli T, Aila S, Markku J, Veli H, Mikko K and Pentti K 2014 IEEE Transactions on Power Electronics 29 1410
[22] Mentor graphics, T3Ster, Mechanical analysis
[23] Lee S Y and Mutharasu D 2011 2nd International Conference on Photonics, 17-19 October, 2011, Kota Kinabalu, Malaysia, p. 1
[24] Székely V and van Bien T 1988 Solid-State Electronics 31 1363
[25] Lasance C J M and Poppe A 2014 Thermal Management for LED Applications (New York: Springer) p. 143
[26] Sergent J E and Krum A 1998 Thermal Management Handbook for Electronic Assemblies (New York: McGraw-Hill)
[27] LUXEON Rebel General Purpose White Portfolio, Technical Datasheet DS64. 2012. Philips Lumileds Lighting Company
[28] Creeoled® XLampoled® XM-L LEDs, Product Family Data Sheet, CLD-DS33 Rev 9A. 2010-2013
[29] Package Related Thermal Resistance of LEDs: Osram opto Semiconductor, Application note, page 1-8, January 2014
[30] Thermal Design Considerations: Philips Semiconductor. www.nxp.com/documents/thermal_design/IC26_CHAPTER_6.pdf (2000).
[31] Lin J 2003 US Patent:10 662 289 [2003-09-16]
[32] Song S, Lee S and Au V 1994 International Electronics Packaging Conference, May 1994, p. 111
[33] Song S, Van A and Kevin P M 1995 Proceedings of the 4th ASME/JSME Thermal Engineering Joint Conference, March 19-24, 1995, Hawaii, United States, p. 199
[34] Teeba N, Kean Y L, Chin K L, Anithambigai P, Dinash K and Mutharasu D 2011 3rm rd Asia Symposium on Quality Electronic Design (ASQED), 19-29 July, 2011, Kuala Lumpur, Malaysia, p. 310
[35] Adrian B 1997 International Journal of Heat and Mass Transfer 49 799
[36] Gautam D, Wager D, Musavi F, Edington M, Eberle W and Dunford W G 2013 28th Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 17-21 March, 2013, California, USA, p. 627
[37] Yang K S, Yang T Y, Tu C W, Yeh C T and Lee M T 2015 Energy Conversion and Management 100 37
[38] Culham J R, Waqar A K, Michael Y and Yuri S M 2007 Journal of Electronic Packaging 129 76
[39] Filanovsky I M and Allam A 2002 IEEE Transactions on Circuits and System I: Fundamental Theory and Apcplications 48 876
[1] Moisture-sensitive torsional cotton artificial muscle and textile
Yuanyuan Li(李媛媛), Xueqi Leng(冷雪琪), Jinkun Sun(孙进坤), Xiang Zhou(周湘), Wei Wu(兀伟), Hong Chen(陈洪), Zunfeng Liu(刘遵峰). Chin. Phys. B, 2020, 29(4): 048103.
[2] AJAC: Atomic data calculation tool in Python
Amani Tahat, Jordi Marti, Kaher Tahat, Ali Khwaldeh. Chin. Phys. B, 2013, 22(4): 048901.
[3] Development of silicon purification by strong radiation catalysis method
Chen Ying-Tian(陈应天), Ho Tso-Hsiu(何祚庥), Lim Chern-Sing(林晨星), and Lim Boon Han(林文汉). Chin. Phys. B, 2010, 19(11): 118105.
[4] Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates
Sun Guo-Sheng(孙国胜), Liu Xing-Fang(刘兴昉), Wang Lei(王雷), Zhao Wan-Shun(赵万顺),Yang Ting(杨挺), Wu Hai-Lei(吴海雷), Yan Guo-Guo(闫果果), Zhao Yong-Mei(赵永梅), Ning Jin(宁瑾), Zeng Yi-Ping(曾一平), and Li Jin-Min(李晋闽). Chin. Phys. B, 2010, 19(8): 088101.
[5] Synthesis of industrial diamonds using FeNi alloy powder as catalyst
Zhou Lin (周林), Jia Xiao-Peng (贾晓鹏), Ma Hong-An (马红安), Zheng You-Jin (郑友进), Li Yan-Tao (李彦涛). Chin. Phys. B, 2008, 17(12): 4665-4668.
No Suggested Reading articles found!