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Development of silicon purification by strong radiation catalysis method |
Chen Ying-Tian(陈应天)a)b)c)†, Ho Tso-Hsiu(何祚庥)c), Lim Chern-Sing(林晨星)b), and Lim Boon Han(林文汉)b) |
a Southern University of Science and Technology, Shenzhen 518055, China; b Yangzhou University, Yangzhou 225009, China; c Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract Using a new type of solar furnace and a specially designed induction furnace,cost effective and highly efficient purification of metallurgical silicon into solar grade silicon can be achieved. It is realized by a new method for extracting boron from silicon with the aid of photo-chemical effect. In this article, we discussed the postulated principle of strong radiation catalysis and the recent development in practice. Starting from ordinary metallurgical silicon, we achieved a purification result of 0.12 ppmw to 0.3 ppmw of boron impurity in silicon by only single pass of a low cost and simple process, the major obstacle to make `cheap' solar grade silicon feedstock in industry is thus removed.
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Accepted manuscript online:
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PACS:
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82.50.-m
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(Photochemistry)
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89.20.Bb
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(Industrial and technological research and development)
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Cite this article:
Chen Ying-Tian(陈应天), Ho Tso-Hsiu(何祚庥), Lim Chern-Sing(林晨星), and Lim Boon Han(林文汉) Development of silicon purification by strong radiation catalysis method 2010 Chin. Phys. B 19 118105
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Teixeira L A V, Tokuda Y, Yoko T and Morita K 2009 ISIJ International 49 777 endfootnotesize
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