Damage threshold influenced by polishing imperfection distribution under 355-nm laser irradiation

doi:10.1088/1674-1056/26/10/104210

Abstract A systematic interpretation of laser-induced damage in the nanosecond regime is realized with a defect distribution buried inside the redeposited layer arising from a polishing process. Under the 355-nm laser irradiation, the size dependence of the defect embedded in the fused silica can be illustrated through the thermal conduction model. Considering CeO₂ as the major initiator, the size distribution with the power law model is determined from the damage probability statistics. To verify the accuracy of the size distribution, the ion output scaling with depth for the inclusion element is obtained with the secondary ion mass spectrometer. For CeO₂ particulates in size of the depth interval with ion output satisfied in the negative exponential form, the corresponding density is consistent with that of the identical size in the calculated size distribution. This coincidence implies an alternative method for the density analysis of photoactive imperfections within optical components at the semi-quantitative level based on the laser damage tests.

Keywords: laser-induced damage size distribution photoactive imperfection

Received: 10 March 2017
Revised: 12 May 2017
Accepted manuscript online:

PACS:	42.70.Hj	(Laser materials)
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	78.20.nb	(Photothermal effects)

Corresponding Authors: Hong-Ji Qi
E-mail: qhj@siom.ac.cn

Cite this article:

Zhen Yu(余振), Hong-Ji Qi(齐红基), Wei-Li Zhang(张伟丽), Hu Wang(王虎), Bin Wang(王斌), Yue-Liang Wang(王岳亮), Hao-Peng Huang(黄昊鹏) Damage threshold influenced by polishing imperfection distribution under 355-nm laser irradiation 2017 Chin. Phys. B 26 104210

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Damage threshold influenced by polishing imperfection distribution under 355-nm laser irradiation

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