Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

doi:10.1088/1674-1056/21/9/097105

Abstract The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V < V < 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages (V >0.6 V), the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm², respectively.

Keywords: ZnO/Si heterostructure current transport laser molecular beam epitaxy

Received: 29 December 2011
Revised: 21 February 2012
Accepted manuscript online:

PACS:	71.55.Gs	(II-VI semiconductors)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	81.15.Fg	(Pulsed laser ablation deposition)

Fund: Project supported by the Postdoctor Foundation of Hebei Province, China, the Natural Science Foundation of Hebei Province, China (Grant No. F2012201093), and the Natural Science Foundation of Hebei University, China (Grant No. 2008127).

Corresponding Authors: Teng Xiao-Yun
E-mail: xyteng@hbu.edu.cn

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Teng Xiao-Yun (滕晓云), Wu Yan-Hua (吴艳华), Yu Wei (于威), Gao Wei (高卫), Fu Guang-Sheng (傅广生) Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy 2012 Chin. Phys. B 21 097105

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Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

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